KF5N50PR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KF5N50PR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 83 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 12 nC
Tiempo de subida (tr): 29 nS
Conductancia de drenaje-sustrato (Cd): 71 pF
Resistencia entre drenaje y fuente RDS(on): 1.4 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de MOSFET KF5N50PR
KF5N50PR Datasheet (PDF)
kf5n50fr kf5n50pr kf5n50ps.pdf
KF5N50PR/FR/PS/FSSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N50PR, KF5N50PSAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, fast reverse recovery time, low on resistance, low gateFcharge and excellent avalanche characteristics. It is mainly suitable forE DIM MILLIMETERSG_+electronic
kf5n50pz.pdf
KF5N50PZSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description AThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for electronic ballast andE DIM MILLIMETERSG_+switching mode power supplies. A 9.9 0.2B
kf5n50ps-fs.pdf
KF5N50PS/FSSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N50PSAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, fast reverse recovery time, low on resistance, low gateFcharge and excellent avalanche characteristics. It is mainly suitable forE DIM MILLIMETERSG_+electronic ballast and swi
kf5n50f.pdf
KF5N50P/F/PZ/FZSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N50P, KF5N50PZAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for electronic ballast andE DIM MILLIMETERSG_+switching mode pow
kf5n50d dz.pdf
KF5N50D/DZSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast and LC D_A 6.60 + 0.20_B 6.10 + 0.20switching mode p
kf5n50ds.pdf
KF5N50DSSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable for LC D_A 6.60 + 0.20_B 6.10 + 0.20electronic ba
kf5n50dz-ds.pdf
KF5N50DZ/DSSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable for LC D_A 6.60 + 0.20_B 6.10 + 0.20electronic
kf5n50dz-iz.pdf
KF5N50DZ/IZSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF5N50DZThis planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gateA KDIM MILLIMETERScharge and excellent avalanche characteristics. It is mainly suitable for LC D_A 6.60 + 0.20_B 6.10 + 0.20
kf5n50fza-fsa.pdf
KF5N50FZA/FSASEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, fast reverse recovery time, low on resistance, low gatecharge and excellent avalanche characteristics. It is mainly suitable forelectronic ballast and switching mode power supplies.FEATURES VDSS=
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