KI4503DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SMD Type ICSMD Type TransistorsN- and P-Channel MOSFETKI4503DYFeaturesTrenchFET Power MOSFETAbsolute Maximum Ratings TA =25N-Channel P-ChannelParameter Symbol Unit10 sec Steady State 10 sec Steady StateDrain-Source Voltage VDS 30 -8 VGate-Source Voltage VGS 20 8 VContinuous Drain Current (TJ = 150 )* TA =25 8.8 6.3 -4.5 -3.8 AIDTA =70 7 5.2 -3.6 -3 APulsed Drain Cu

SMD Type ICSMD Type TransistorsComplementary MOSFET Half-Bridge (N- and P-Channel)KI4500BDYFeaturesTrenchFET Power MOSFETAbsolute Maximum Ratings TA =25N-Channel P-ChannelParameter Symbol Unit10 sec Steady State 10 sec Steady StateDrain-Source Voltage VDS 20 -20 VGate-Source Voltage VGS 12 12 VContinuous Drain Current TA =25 9.1 6.6 ?5.3 -3.8 AID(TJ = 150 )* TA =70 7

SMD Type ICSMD Type TransistorsComplementary MOSFET Half-Bridge (N- and P-Channel)KI4501DYPIN ConfigurationAbsolute Maximum Ratings TA =25Parameter Symbol N-Channel P-Channel UnitDrain-Source Voltage VDS 30 -8 VGate-Source Voltage VGS 20 8 VContinuous Drain Current (TJ = 150 )* TA =25 9 6.2 AIDTA =70 7.4 5.0 APulsed Drain Current IDM 30 20 AContinuous Source Current (D

SMD Type ICSMD Type TransistorsN- and P-Channel MOSFETKI4505DYFeaturesTrenchFET Power MOSFETAbsolute Maximum Ratings TA =25N-Channel P-ChannelParameter Symbol Unit10 sec Steady State 10 sec Steady StateDrain-Source Voltage VDS 30 -8 VGate-Source Voltage VGS 20 8 VContinuous Drain Current (TJ = 150 )* TA =25 7.8 6 -5 -3.8 AIDTA =70 6 5.2 -3.6 -3 APulsed Drain Curren

SMD Type ICSMD Type TransistorsComplementary (N- and P-Channel) MOSFET Half-BridgeKI4501ADYFeaturesTrenchFET Power MOSFETAbsolute Maximum Ratings TA = 25N-Channel P-ChannelParameter Symbol Unit10 sec Steady State 10 sec Steady StateDrain-Source Voltage VDS 30 -8 VGate-Source Voltage VGS 20 8 VContinuous Drain Current (TJ = 150 )* TA =25 8.8 6.3 -5.7 -4.1 AIDTA =70 7