KI5903DC MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

KI5903DC datasheet

..1. Size:67K renesas
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SMD Type IC SMD Type IC Dual P-Channel 2.5-V (G-S) MOSFET KI5903DC Features Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 12 TA =25 2.9 2.1 Continuous Drain Current (TJ = 150 ) * ID TA =85 2.1 1.5 A Pulsed Drain Current IDM 10 Continuous Source Current * IS -1.8 -0.9 TA =25 2.1 1.1 Maximum Power

9.1. Size:67K renesas
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SMD Type IC SMD Type IC Dual P-Channel 1.8-V (G-S) MOSFET KI5905DC Features Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -8 V Gate-Source Voltage VGS 8 TA =25 4.1 3.0 Continuous Drain Current (TJ = 150 ) * ID TA =85 2.9 2.2 A Pulsed Drain Current IDM 10 Continuous Source Current * IS -1.8 -0.9 TA =25 2.1 1.1 Maximum Power D

9.2. Size:66K renesas
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SMD Type IC SMD Type IC Dual N-Channel 20-V (D-S) MOSFET KI5908DC Features TrenchFET Power MOSFETS Ultra Low rDS(on) and Excellent Power Handling In Compact Footprint Absolute Maximum Ratings Ta = 25 Parameter Symbol 5secs Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150 ) TA =25 5.9 4.4 ID TA =85 4.2 3.1 A Pulsed Drai

9.3. Size:65K renesas
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SMD Type IC SMD Type IC Dual N-Channel 30-V (D-S) MOSFET KI5902DC Features Absolute Maximum Ratings Ta = 25 Parameter Symbol 5secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 ) TA =25 3.9 2.9 ID TA =85 2.8 2.1 A Pulsed Drain Current IDM 10 Continuous Source Current (Diode Conduction)* IS 4.8 0.9 Maximum Power Diss