KI5905DC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KI5905DC
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 8 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 45 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
Paquete / Cubierta: CHIPFET
- Selección de transistores por parámetros
KI5905DC Datasheet (PDF)
ki5905dc.pdf

SMD Type ICSMD Type ICDual P-Channel 1.8-V (G-S) MOSFETKI5905DCFeaturesAbsolute Maximum Ratings Ta = 25Parameter Symbol 5 secs Steady State UnitDrain-Source Voltage VDS -8VGate-Source Voltage VGS 8TA =25 4.1 3.0Continuous Drain Current (TJ = 150 ) * IDTA =85 2.9 2.2APulsed Drain Current IDM 10Continuous Source Current * IS -1.8 -0.9TA =25 2.1 1.1Maximum Power D
ki5903dc.pdf

SMD Type ICSMD Type ICDual P-Channel 2.5-V (G-S) MOSFETKI5903DCFeaturesAbsolute Maximum Ratings Ta = 25Parameter Symbol 5 secs Steady State UnitDrain-Source Voltage VDS -20VGate-Source Voltage VGS 12TA =25 2.9 2.1Continuous Drain Current (TJ = 150 ) * IDTA =85 2.1 1.5APulsed Drain Current IDM 10Continuous Source Current * IS -1.8 -0.9TA =25 2.1 1.1Maximum Power
ki5908dc.pdf

SMD Type ICSMD Type ICDual N-Channel 20-V (D-S) MOSFETKI5908DCFeaturesTrenchFET Power MOSFETSUltra Low rDS(on) and Excellent PowerHandling In Compact FootprintAbsolute Maximum Ratings Ta = 25Parameter Symbol 5secs Steady State UnitDrain-Source Voltage VDS 20VGate-Source Voltage VGS 8Continuous Drain Current (TJ = 150 ) TA =25 5.9 4.4IDTA =85 4.2 3.1APulsed Drai
ki5902dc.pdf

SMD Type ICSMD Type ICDual N-Channel 30-V (D-S) MOSFETKI5902DCFeaturesAbsolute Maximum Ratings Ta = 25Parameter Symbol 5secs Steady State UnitDrain-Source Voltage VDS 30VGate-Source Voltage VGS 20Continuous Drain Current (TJ = 150 ) TA =25 3.9 2.9IDTA =85 2.8 2.1APulsed Drain Current IDM 10Continuous Source Current (Diode Conduction)* IS 4.8 0.9Maximum Power Diss
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: NCE65N260F | VBZE50P03 | IPB60R190C6 | FCH20N60
History: NCE65N260F | VBZE50P03 | IPB60R190C6 | FCH20N60



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