KO3403 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KO3403
Código: A3
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 1.4 W
Tensión drenaje-fuente (Vds): 30 V
Tensión compuerta-fuente (Vgs): 12 V
Corriente continua de drenaje (Id): 2.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 1.4 V
Carga de compuerta (Qg): 4.4 nC
Tiempo de elevación (tr): 5.3 nS
Conductancia de drenaje-sustrato (Cd): 55 pF
Resistencia drenaje-fuente RDS(on): 0.13 Ohm
Empaquetado / Estuche: SOT-23
Búsqueda de reemplazo de MOSFET KO3403
KO3403 Datasheet (PDF)
1.1. ko3403.pdf 
Size:56K _update_mosfet
SMD Type IC SMD Type Transistors P-Channel Enhancement Mode Field Effect Transistor KO3403 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features VDS (V) =-30V ID =-2.6 A (VGS=-10V) 12 RDS(ON) 130 m (VGS =-10V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) 180 m (VGS =-4.5V) RDS(ON) 260m (VGS =-2.5V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute
5.1. ko3404.pdf Size:55K _update_mosfet
SMD Type IC SMD Type Transistors N-Channel Enhancement Mode Field Effect Transistor KO3404 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 3 VDS (V) = 30V ID =5.8 A (VGS=10V) RDS(ON) 28 m (VGS =10V) 12 +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(ON) 43 m (VGS =4.5V) +0.1 1.9-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Paramet
5.2. ko3407.pdf Size:52K _update_mosfet
SMD Type IC SMD Type Transistors P-Channel Enhancement Mode Field Effect Transistor KO3407 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 3 VDS (V) = -30V ID =-4.1 A 12 RDS(ON) 52m (VGS = -10V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 RDS(ON) 87m (VGS = -4.5V) 1.9-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symb
5.3. ko3409.pdf Size:54K _update_mosfet
SMD Type MOSFET P-Channel Enhancement Mode Field Effect Transistor KO3409(AO3409) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 3 VDS (V) = -30V ID =-2.6A(VGS = -10V) 12 RDS(ON) < 130m (VGS = -10V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) < 200m (VGS = -4.5V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Param
5.4. ko3402.pdf Size:54K _update_mosfet
SMD Type IC SMD Type MOSFET N-Channel Enhancement Mode Field Effect Transistor KO3402(AO3402) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features VDS (V) = 30V ID =4A 12 +0.1 +0.05 RDS(ON) 55m (VGS = 10V) 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) 70m (VGS =4.5V) RDS(ON) 110m (VGS =2.5V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings T
5.5. ko3400-89.pdf Size:1163K _kexin
SMD Type IC SMD Type MOSFET N-Channel MOSFET KO3400 SOT-89 Unit:mm Features 1.70 0.1 VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V) 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 12 V Continu
5.6. ko3401.pdf Size:1515K _kexin
SMD Type MOSFET P-Channel Enhancement MOSFET KO3401 SOT-89 Unit:mm ■ Features 1.70 0.1 ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON) ＜ 65mΩ (VGS =-10V) ● RDS(ON) ＜ 70mΩ (VGS =-4.5V) D 0.42 0.1 ● RDS(ON) ＜ 120mΩ (VGS =-2.5V) 0.46 0.1 1.Gate G 2.Drain S 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source
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