KP8N60F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KP8N60F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 37.9 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 16 nC
Tiempo de subida (tr): 20 nS
Conductancia de drenaje-sustrato (Cd): 550 pF
Resistencia entre drenaje y fuente RDS(on): 0.58 Ohm
Paquete / Cubierta: TO-220IS
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KP8N60F Datasheet (PDF)
kp8n60f.pdf
KP8N60FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description CAThis Super Junction MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERS_A 10.16 0.2+correction and switching mode power suppli
kp8n60f.pdf
isc N-Channel MOSFET Transistor KP8N60FFEATURESStatic drain-source on-resistance:RDS(on) 0.58Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for active power factor correction and switching modePower suppliesABSOLUTE MAXIMUM RATINGS(T =25
kp8n60d.pdf
KP8N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KP8N60DThis Super Junction MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSLavalanche characteristics. It is mainly suitable for active power factorC D_A 6.60 + 0.20_B 6.10 + 0.20correctio
kp8n65d.pdf
KP8N65D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KP8N65DThis Super Junction MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSLavalanche characteristics. It is mainly suitable for active power factorC D_A 6.60 + 0.20_B 6.10 + 0.20correctio
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
