KP978A Todos los transistores

 

KP978A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KP978A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 65 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 14 pF
   Paquete / Cubierta: KT-83

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KP978A Datasheet (PDF)

 ..1. Size:99K  syntez microelectronics
kp978a.pdf

KP978A

Syntez MicroelectronicsSILICON MOS N-CHANNEL RF POWER TRANSISTORKP978A5 W, up to 500 MHz, Enhancement Mode________________________________________________Designed primarily for wideband largesignal outputand driver from 30500 MHz.Features: Performance at 500 MHz, 28 Vdc Power Gain: 13 dB Min Output Power: 5 W Efficiency: 50 % MinAbsolute Maximum RatingsPa

 9.1. Size:95K  syntez microelectronics
kp978vc.pdf

KP978A

Syntez MicroelectronicsSILICON MOS N-CHANNEL RF POWER TRANSISTORKP978VC20 W, up to 500 MHz, Enhancement Mode________________________________________________Designed primarily for wideband largesignal outputand driver from 30500 MHz.Features: Performance at 500 MHz, 28 Vdc Power Gain: 12 dB Min Output Power: 20 W Efficiency: 50 % MinAbsolute Maximum Ratings

 9.2. Size:95K  syntez microelectronics
kp978gc.pdf

KP978A

Syntez MicroelectronicsSILICON MOS N-CHANNEL RF POWER TRANSISTORKP978GC40 W, up to 500 MHz, Enhancement Mode________________________________________________Designed primarily for wideband largesignal outputand driver from 30500 MHz.Features: Performance at 500 MHz, 28 Vdc Power Gain: 12 dB Min Output Power: 40 W Efficiency: 50 % MinAbsolute Maximum Ratings

 9.3. Size:95K  syntez microelectronics
kp978bc.pdf

KP978A

Syntez MicroelectronicsSILICON MOS N-CHANNEL RF POWER TRANSISTORKP978BC10 W, up to 500 MHz, Enhancement Mode________________________________________________Designed primarily for wideband largesignal outputand driver from 30500 MHz.Features: Performance at 500 MHz, 28 Vdc Power Gain: 13 dB Min Output Power: 10 W Efficiency: 50 % MinAbsolute Maximum Ratings

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
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