KPA1750 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KPA1750
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 110 nS
   Cossⓘ - Capacitancia de salida: 385 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
   Paquete / Cubierta: SOP-8

Búsqueda de reemplazo de MOSFET KPA1750

KPA1750 Datasheet (PDF)

..1. Size:198K tysemi
kpa1750.pdf

SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICProduct specificationKPA1750FeaturesDual MOSFET chips in small package4V Gate Drive Type and Low On-ResistanceRDS(on)1 =0.09 TYP. (VGS =-10 V, ID =-1.8 A)RDS(on)2 =0.18 TYP. (VGS =-4V, ID = -1.8A)Low Ciss : Ciss = 540 pF TYP.

8.1. Size:186K tysemi
kpa1758.pdf

SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type MOSFETSMD TypeSMD Type ICProduct specificationKPA1758FeaturesDual MOS FET chips in small package2.5 V gate drive type low on-state resistanceRDS(on)1 =30 m (MAX.) (VGS =4.5 V, ID =3.0 A)RDS(on)2 =40 m (MAX.) (VGS =2.5 V, ID =3.0 A)1 : Sou

9.1. Size:57K renesas
kpa1793.pdf

SMD Type ICSMD Type ICMOS Field Effect TransistorKPA1793FeaturesLow on-state resistanceN-channel RDS(on)1 =69 m MAX. (VGS =10 V, ID =1.5 A)RDS(on)2 =72 m MAX. (VGS =4.0 V, ID =1.5 A)RDS(on)3 = 107 m MAX. (VGS =2.5 V, ID =1.0 A)P-channel RDS(on)1 = 115 m MAX. (VGS =-4.5 V, ID =-1.5A)RDS(on)2 = 120 m MAX. (VGS =-4.0V, ID =-1.5 A)RDS(on)3 = 190 m MAX. (VGS =-2.5V, ID =-1.0 A)

9.2. Size:154K tysemi
kpa1716.pdf

SMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICProduct specificationKPA1716FeaturesLow on-state resistanceRDS(on)1 = 12.5 m TYP. (VGS =-10 V, ID =-4 A)RDS(on)2 =17 m TYP. (VGS =-4.5 V, ID =-4A)RDS(on)3 =19 m TYP. (VGS = -4.01 V, ID =-4 A)Low Ciss : Ciss = 2100 pF TYP.Built-in G-S protection diodeSmall and surface mount package

9.3. Size:100K tysemi
kpa1764.pdf

SMD Type ICSMD Type ICSMD Type ICSMD Type ICProduct specificationKPA1764FeaturesDual chip typeLow on-state resistanceRDS(on)1 =27 m TYP. (VGS =10V, ID =3.5 A)RDS(on)2 =32 m TYP. (VGS =4.5 V, ID =3.5 A)1 : Source 1RDS(on)3 =34 m TYP. (VGS =4.0 V, ID =3.5 A)2: Gate 1Low input capacitance7, 8 : Drain 13 : Source 2Ciss = 1300 pF TYP.4: Gate 25, 6 : Drain 2Bui

9.4. Size:485K tysemi
kpa1792.pdf

SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Typ

9.5. Size:676K tysemi
kpa1790.pdf

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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