KPA1792 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KPA1792
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1.5 V
Qgⓘ - Carga de la puerta: 14 nC
trⓘ - Tiempo de subida: 140 nS
Cossⓘ - Capacitancia de salida: 250 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
Paquete / Cubierta: SOP-8
Búsqueda de reemplazo de MOSFET KPA1792
KPA1792 Datasheet (PDF)
kpa1792.pdf
SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Typ
kpa1793.pdf
SMD Type ICSMD Type ICMOS Field Effect TransistorKPA1793FeaturesLow on-state resistanceN-channel RDS(on)1 =69 m MAX. (VGS =10 V, ID =1.5 A)RDS(on)2 =72 m MAX. (VGS =4.0 V, ID =1.5 A)RDS(on)3 = 107 m MAX. (VGS =2.5 V, ID =1.0 A)P-channel RDS(on)1 = 115 m MAX. (VGS =-4.5 V, ID =-1.5A)RDS(on)2 = 120 m MAX. (VGS =-4.0V, ID =-1.5 A)RDS(on)3 = 190 m MAX. (VGS =-2.5V, ID =-1.0 A)
kpa1790.pdf
SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Typ
kpa1716.pdf
SMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICProduct specificationKPA1716FeaturesLow on-state resistanceRDS(on)1 = 12.5 m TYP. (VGS =-10 V, ID =-4 A)RDS(on)2 =17 m TYP. (VGS =-4.5 V, ID =-4A)RDS(on)3 =19 m TYP. (VGS = -4.01 V, ID =-4 A)Low Ciss : Ciss = 2100 pF TYP.Built-in G-S protection diodeSmall and surface mount package
kpa1764.pdf
SMD Type ICSMD Type ICSMD Type ICSMD Type ICProduct specificationKPA1764FeaturesDual chip typeLow on-state resistanceRDS(on)1 =27 m TYP. (VGS =10V, ID =3.5 A)RDS(on)2 =32 m TYP. (VGS =4.5 V, ID =3.5 A)1 : Source 1RDS(on)3 =34 m TYP. (VGS =4.0 V, ID =3.5 A)2: Gate 1Low input capacitance7, 8 : Drain 13 : Source 2Ciss = 1300 pF TYP.4: Gate 25, 6 : Drain 2Bui
kpa1758.pdf
SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type MOSFETSMD TypeSMD Type ICProduct specificationKPA1758FeaturesDual MOS FET chips in small package2.5 V gate drive type low on-state resistanceRDS(on)1 =30 m (MAX.) (VGS =4.5 V, ID =3.0 A)RDS(on)2 =40 m (MAX.) (VGS =2.5 V, ID =3.0 A)1 : Sou
kpa1750.pdf
SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICProduct specificationKPA1750FeaturesDual MOSFET chips in small package4V Gate Drive Type and Low On-ResistanceRDS(on)1 =0.09 TYP. (VGS =-10 V, ID =-1.8 A)RDS(on)2 =0.18 TYP. (VGS =-4V, ID = -1.8A)Low Ciss : Ciss = 540 pF TYP.
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: AO3416A
History: AO3416A
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