KPA1816 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KPA1816
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 132 nS
Cossⓘ - Capacitancia de salida: 400 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Paquete / Cubierta: TSSOP-8
Búsqueda de reemplazo de KPA1816 MOSFET
KPA1816 Datasheet (PDF)
kpa1816.pdf

SMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICProduct specificationKPA1816TSSOP-8Features Unit: mm1.8V drive availableLow on-state resistanceRDS(on)1 =15 m TYP. (VGS =-4.5V, ID =-4.5A)RDS(on)2 =16 m TYP. (VGS =-4.0V, ID =-4.5A)RDS(on)3 = 22.5 m TYP. (VGS =-2.5 V, ID =-4.5A)1, 2, 3 : SourceRDS(on)4 = 41.5 m TYP. (VGS =-1.8 V
kpa1871.pdf

SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICProduct specificationKPA1871FeaturesTSSOP-8Unit: mmCan be driven by a 2.5-V power sourceLow on-state resistanceRDS(on)1 =26 m TYP. (VGS =4.5 V, ID =3.0 A)RDS(on)2 =27 m TYP. (VGS =4.0 V, ID =3.0 A)RDS(on)3 =38 m TYP. (VGS =2.5 V, ID =3.0 A)Built-in G-S protection diode against ESD5: Gate21: Dra
kpa1873.pdf

SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICProduct specificationKPA1873TSSOP-8FeaturesUnit: mm2.5 V drive availableLow on-state resistanceRDS(on)1 =23 m TYP. (VGS =4.5 V, ID =3.0 A)RDS(on)2 =24 m TYP. (VGS =4.0 V, ID =3.0 A)RDS(on)3 =28 m TYP. (VGS =3.1 V, ID =3.0 A)5: Gate21: Drain1RD
kpa1890.pdf

SMD Type ICSMD Type ICMOS Field Effect TransistorKPA1890FeaturesTSSOP-8Unit: mmCan be driven by a 4.0-V power sourceLow on-state resistanceN-channel RDS(on)1 =27 m MAX. (VGS =10 V, ID =3.0 A)RDS(on)2 =37 m MAX. (VGS =4.5 V, ID =3.0 A)RDS(on)3 =47 m MAX. (VGS =4.0 V, ID =3 A)P-channel RDS(on)1 =37m MAX. (VGS =-10 V, ID =-2.5 A)RDS(on)2 =56 m MAX. (VGS =-4.5V, ID =-2.5 A
Otros transistores... KP981VC , KPA1716 , KPA1750 , KPA1758 , KPA1764 , KPA1790 , KPA1792 , KPA1793 , IRF730 , KPA1871 , KPA1873 , KPA1890 , KPA2790GR , KPCF8402 , KQB12P20 , KQB27P06 , KQB2N30 .
History: HGK012NE6A | FDN86501LZ
History: HGK012NE6A | FDN86501LZ



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
irf9640 | 2n3053 | a1015 | mpsa42 | 2n5551 transistor | a1015 transistor | c945 | ac128 transistor