KRF7309 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRF7309
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 180 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Paquete / Cubierta: SOP-8
Búsqueda de reemplazo de MOSFET KRF7309
KRF7309 Datasheet (PDF)
krf7309.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7309FeaturesGeneration V TechnologyUltra Low On-ResistanceDual N and P Channel MosfetSurface MountAvailable in Tape & ReelDynamic dv/dt RatingFast SwitchingAbsolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P-Channel Unit10 Sec. Pulse Drain Current, VGS @ 10V Ta =25 ID 4.7 -3.5Continuous Drain Current VGS @10V Ta
krf7307.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7307FeaturesGeneration V TechnologyUltra Low On-ResistanceDual N and P Channel MosfetSurface MountAvailable in Tape & ReelDynamic dv/dt RatingFast SwitchingAbsolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P-Channel Unit10 Sec. Pulse Drain Current, VGS @4.5V Ta =25 ID 5.7 -4.7Continuous Drain Current VGS @4.5V Ta
krf7301.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7301FeaturesGeneration V TechnologyUltra Low On-ResistanceDual N-Channel MosfetSurface MountAvailable in Tape & ReelDynamic dv/dt RatingFast SwitchingAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit10 Sec. Pulsed Drain Current, VGS @4.5V,Ta =25 ID 5.7Continuous Drain Current, VGS @4.5V,Ta =25 ID 5.2AContin
krf7319.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7319FeaturesGeneration V TechnologyUltra Low On-ResistanceDual N and P Channel MOSFETSurface MountFully Avalanche RatedAbsolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P-Channel UnitDrain-Source Voltage VDS 30 -30 VContinuous Drain Current *5 Ta =25 ID 6.5 -4.9Continuous Drain Current *5 Ta =70 ID 5.2 -3.9APul
krf7313.pdf
SMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICProduct specificationKRF7313FeaturesGeneration V TechnologyUltra Low On-ResistanceDual N-Channel MosfetSurface MountFully Avalanche RatedAbsolute M
krf7325.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7325FeaturesTrench TechnologyUltra Low On-ResistanceDual P-Channel MOSFETLow Profile (
krf7350.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7350FeaturesUltra Low On-ResistanceDual N and P Channel MOSFETSurface MountAvailable in Tape and ReelAbsolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P-Channel UnitDrain-Source Voltage VDS 100 -100 VContinuous Drain Current Ta =25 ID 2.1 -1.5Continuous Drain Current Ta =70 ID 1.7 -1.2 APulsed Drain Current *1 IDM
krf7343.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7343FeaturesGeneration V TechnologyUltra Low On-ResistanceDual N and P Channel MOSFETSurface MountFully Avalanche RatedAbsolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P-Channel UnitDrain-Source Voltage VDS 55 -55 VContinuous Drain Current,VGS@10V , Ta =25 ID 4.7 -3.4Continuous Drain Current ,VGS@10V , Ta =70 ID 3
krf7389.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7389FeaturesGeneration V TechnologyUltra Low On-ResistanceComplimentary Half BridgeSurface MountFully Avalanche RatedAbsolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P-Channel UnitDrain-Source Voltage VDS 30 -30 VContinuous Drain Current Ta =25 ID 7.3 -5.3Continuous Drain Current Ta =70 ID 5.9 -4.2APulsed Drai
krf7317.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7317FeaturesGeneration V TechnologyUltra Low On-ResistanceDual N and P Channel MOSFETSurface MountFully Avalanche RatedAbsolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P-Channel UnitDrain-Source Voltage VDS 20 -20 VContinuous Drain Current Ta =25 ID 6.6 -5.3Continuous Drain Current Ta =70 ID 5.3 -4.3APulsed Dr
krf7338.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7338FeaturesUltra Low On-ResistanceDual N and P Channel MOSFETSurface MountAvailable in Tape & ReelAbsolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P-Channel UnitDrain-Source Voltage VDS 12 -12 VContinuous Drain Current,VGS@10V , Ta =25 ID 6.3 -3.0Continuous Drain Current ,VGS@10V , Ta =70 ID 5.2 -2.5 APulsed Drai
krf7379.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7379FeaturesGeneration V TechnologyUltra Low On-ResistanceComplimentary Half BridgeSurface MountFully Avalanche RatedAbsolute Maximum Ratings Ta = 25Parameter Symbol N-Channel P-Channel UnitDrain-Source Voltage VDS 30 -30 VContinuous Drain Current, VGS @ 10V @ Ta =25 ID 5.8 -4.3Continuous Drain Current, VGS @ 10V @ Ta =70 I
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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