KRF7750 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRF7750
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 4.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 VQgⓘ - Carga de la puerta: 26 nC
trⓘ - Tiempo de subida: 54 nS
Cossⓘ - Capacitancia de salida: 380 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Paquete / Cubierta: TSSOP-8
Búsqueda de reemplazo de MOSFET KRF7750
KRF7750 Datasheet (PDF)
krf7750.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7750TSSOP-8Unit: mmFeaturesUltra Low On-ResistanceDual P-Channel MOSFETVery Small SOIC PackageLow Profile ( 1.1mm)Available in Tape & Reel1,5,8: Drain2,3,6,7: Source4: GateAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain- Source Voltage VDS -20 VContinuous Drain Current, VGS @ -4.5V @ TC =25 ID 4.7
krf7756.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7756TSSOP-8Unit: mmFeaturesUltra Low On-ResistanceDual P-Channel MOSFETVery Small SOIC PackageLow Profile ( 1.2mm)Available in Tape & Reel1,5,8: Drain2,3,6,7: Source4: GateAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain- Source Voltage VDS -12 VContinuous Drain Current, VGS @ -4.5V @ TA =25 ID -4.3
krf7706.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7706TSSOP-8Unit: mmFeaturesUltra Low On-ResistanceP-Channel MOSFETVery Small SOIC PackageLow Profile ( 1.2mm)1,5,8: DrainAvailable in Tape & Reel2,3,6,7: Source4: GateAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain- Source Voltage VDS -30 VContinuous Drain Current, VGS @ -10V @ Ta =25 ID -7Contin
krf7703.pdf
SMD Type ICSMD Type ICHEXFET Power MOSFETKRF7703TSSOP-8Unit: mmFeaturesUltra Low On-ResistanceP-Channel MOSFETVery Small SOIC PackageLow Profile ( 1.2mm)1,5,8: DrainAvailable in Tape & Reel2,3,6,7: Source4: GateAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain- Source Voltage VDS -40 VContinuous Drain Current, VGS @-10V@Ta =25 ID -6.0Continu
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918