PHB50N06LT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHB50N06LT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm

Encapsulados: SOT404

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PHB50N06LT datasheet

 ..1. Size:55K  philips
 phb50n06lt.pdf pdf_icon

PHB50N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHB50N06LT Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 50 A the device fea

 6.1. Size:56K  philips
 phb50n06t 1.pdf pdf_icon

PHB50N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHB50N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 50 A trench technology the devic

 7.1. Size:111K  philips
 phb50n03lt phd50n03lt php50n03lt 7.pdf pdf_icon

PHB50N06LT

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP50N03LT, PHB50N03LT Logic level FET PHD50N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 48 A High thermal cycling performance Low thermal resistance RDS(ON) 16 m (VGS = 10 V) g Logic leve

 7.2. Size:52K  philips
 phb50n03t 1.pdf pdf_icon

PHB50N06LT

Philips Semiconductors Product specification TrenchMOS transistor PHB50N03T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting using ID Drain current (DC) 50 A trench technology. The devic

MOSTRAR MÁS

Otros transistores... PHB3N40E, PHB3N50E, PHB3N60E, PHB42N03LT, PHB44N06LT, PHB45N03LT, PHB4N60E, PHB50N03LT, IRLB4132, PHB55N03LT, PHB60N06LT, PHB65N06LT, PHB69N03LT, PHB6N50E, PHB6N60E, PHB6ND50E, PHB7N60E