KRLML2502 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRLML2502
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.25 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 4.2 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.2 V
Carga de la puerta (Qg): 8 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 90 pF
Resistencia entre drenaje y fuente RDS(on): 0.045 Ohm
Paquete / Cubierta: SOT-23
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KRLML2502 Datasheet (PDF)
krlml2502.pdf
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SMD Type MOSFETSMDType MOSFETSMDTypee ans istICDIP Type TrMOSFETSMD TypeDIP TySMD TyppeeDIP TyppeeSMD CSMD Ty IorSMD Typ ICSMD Type ICDIP Type MOSFETSMDTypeSMDType ICTypeProduct specificationKRLML2502SOT-23-3Unit: mm+0.22.9-0.2Features0.4+0.1-0.053Ultra Low On-ResistanceN-Channel MOSFETLow Profile (
irlml2402 krlml2402.pdf
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SMD Type MOSFETN-Channel MOSFETIRLML2402 (KRlML2402)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 1.2 A( VGS = 4.5V)1 2+0.1+0.050.95 -0.1 RDS(ON) 250m (VGS = 4.5V) 0.1 -0.011.9+0.1D -0.1 RDS(ON) 350m (VGS = 2.7V)1. GateG2. Source3. DrainS Absolute Maximum Ratings Ta = 25Parameter Symb
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SMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type ICSMD Type MOSFETSMD Type MOSFESMD Type MOSFESMD TypeSMD TypeSMD Type
krlml0100.pdf
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SMD Type MOSFETN-Channel MOSFETIRLML0100 (KRLML0100)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 100V ID = 1.6A (VGS = 10V)1 2+0.02+0.1 RDS(ON) 220m (VGS = 10V) 0.15 -0.020.95 -0.1+0.11.9 -0.2G 1 RDS(ON) 235m (VGS = 4.5V)3 D1. Gate2. SourceS 23. Drain Absolute Maximum Ratings Ta = 25Param
irlml6401 krlml6401.pdf
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SMD TypeSM MOSFETP-Channel Enhancement MOSFETIRLML6401 KRLML6401)(SOT-23Unit: mm+0.12.9 -0.1 Features+0.10.4 -0.1 Ultra low on-resistance.3 P-Channel MOSFET. Fast switching.1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base1. Gate2.Emitter2. Source3. Drain3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Ra
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