KSP92 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSP92
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 240 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 20 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 18 Ohm
Encapsulados: SOT-223
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KSP92 datasheet
ksp92 ksp93.pdf
KSP92/93 High Voltage Transistor TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage KSP92 -300 V KSP93 -200 V VCEO Collector-Emitter Voltage KSP92 -300 V KSP93 -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA PC Col
ksp92.pdf
KSP92/93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage KSP92 VCBO -300 V KSP93 -200 V Collector-Emitter Voltage KSP92 VCEO -300 V KSP93 -200 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Collector Dissipation (TA=25 ) PC 625 mW mW/ Derate above 2
ksp92 ksp93.pdf
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ksp92.pdf
SMD Type IC SMD Type Transistors P-channel enhancement mode vertical D-MOS transistor KSP92 SOT-223 Unit mm 3.50+0.2 6.50+0.2 -0.2 -0.2 Features Low threshold voltage VGS(th) +0.2 0.90-0.2 3.00+0.1 -0.1 Direct interface to C-MOS, TTL,etc. 7.00+0.3 -0.3 High-speed switching 4 No secondary breakdown. 1 gate 1 2 3 0.70+0.1 -0.1 2,4 drain 2.9 4.6 3 source Absolute Maxi
Otros transistores... KRFR6215, KRFR9210, KRFR9310, KRLML0100, KRLML2502, KRLML6402, KSO200P03S, KSP230, 2SK3568, KSS138, KSS84, KTD2005, KTD2017, KTHC5513, KTHD3100C, KTK7132E, KTS1C1S250
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