KTD2017 Todos los transistores

 ..1. Size:46K  kexin
 ktd2017.pdf

SMD Type IC SMD Type IC N-Channel Silicon MOSFET KTD2017 TSSOP-8 Unit mm Features Low ON resistance. 2.5V drive. Mounting height 1.1mm Composite type, facilitating high-density mounting. 5 Gate2 1 Drain1 6 Source2 2 Source1 7 Source2 3 Source1 8 Drain2 4 Gate1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-to-Source Voltage VDSS 20 V Gate-

 9.1. Size:438K  kec
 ktd2061.pdf

SEMICONDUCTOR KTD2061 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION TV, MONITOR VERTICAL OUTPUT APPLICATION A C DRIVER STAGE APPLICATION DIM MILLIMETERS S COROR TV CLASS B SOUND OUTPUT APPLICATION _ A 10.0 0.3 + _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 FEATURES _ E 3.2 0.2 + High Breakdown Voltage VCEO=180V(Min.) _ F 3.0 0.3 +

 9.2. Size:40K  kec
 ktd2058.pdf

SEMICONDUCTOR KTD2058 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Low Saturation Voltage _ A 10.0 0.3 + _ + B 15.0 0.3 E VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. C _ 2.70 0.3 + D 0.76+0.09/-0.05 Complementary to KTB1366. _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5

 9.3. Size:444K  kec
 ktd2060.pdf

SEMICONDUCTOR KTD2060 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Good Linearity of hFE. _ A 10.0 0.3 + _ + B 15.0 0.3 E Complementary to KTB1368. C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L MAXIMUM RATING (Ta=25 ) R K _ 3.7 0.

 9.4. Size:452K  kec
 ktd2066.pdf

SEMICONDUCTOR KTD2066 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT SWITCHING APPLICATION. LAMP SOLENOID DRIVER APPLICATION. A C DIM MILLIMETERS S FEATURES _ A 10.0 0.3 + _ + B 15.0 0.3 E High DC Current Gain C _ 2.70 0.3 + D 0.76+0.09/-0.05 hFE=500 1500(IC=1A). _ E 3.2 0.2 + Low Collector Saturation Voltage _ F 3.0 0.3 + _ 12.0 0.3 G + VCE(sa

 9.5. Size:441K  kec
 ktd2059.pdf

SEMICONDUCTOR KTD2059 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Complementary to KTB1367. _ A 10.0 0.3 + _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + MAXIMUM RATING (Ta=25 ) H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L CHARACTERISTIC SYMBOL RATING UNIT R

 9.6. Size:451K  kec
 ktd2092.pdf

SEMICONDUCTOR KTD2092 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. A C DIM MILLIMETERS S FEATURES _ A 10.0 0.3 + _ + B 15.0 0.3 E High hFE hFE=500 1500 (IC=0.5A). C _ 2.70 0.3 + D 0.76+0.09/-0.05 Low Collector Saturation VCE(sat)=0.35V(Max.) (IC=1A). _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.

 9.7. Size:198K  lge
 ktd2058.pdf

KTD2058(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER 3 2 1 Features Low Collector Saturation Voltage VCE(SAT) = 1. 0V(MAX) . Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V

 9.8. Size:47K  kexin
 ktd2005.pdf

SMD Type IC SMD Type IC Ultrahigh-Speed Switching Applications KTD2005 TSSOP-8 Unit mm Features Low ON resistance. 2.5V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. 5 Gate2 1 Drain1 6 Source2 2 Source1 7 Source2 3 Source1 8 Drain2 4 Gate1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-to-Source Voltage V

 9.9. Size:217K  inchange semiconductor
 ktd2061.pdf

isc Silicon NPN Power Transistor KTD2061 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Low Collector Saturation Voltage- V = 1.0V(Max)@ (I = 0.5A, I = 50mA) CE(sat) C B Complement to Type KTB1369 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High Voltage application TV, monitor vertical

 9.10. Size:215K  inchange semiconductor
 ktd2058.pdf

isc Silicon NPN Power Transistor KTD2058 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO Collector Power Dissipation P = 25 W@ T = 25 C C Low Collector Saturation Voltage- V = -1.0V(Max)@ (I = -2A, I = -0.2A) CE(sat) C B Complement to Type KTB1366 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO

 9.11. Size:216K  inchange semiconductor
 ktd2059.pdf

isc Silicon NPN Power Transistor KTD2059 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector Power Dissipation- P = 30W@ T = 25 C C Low Collector Saturation Voltage- V = 2.0V(Max)@ (I = 4A, I = 0.4A) CE(sat) C B Complement to Type KTB1367 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS