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L2N7002LT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: L2N7002LT1G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.225 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.115 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 10 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm
   Paquete / Cubierta: SOT-23
 

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L2N7002LT1G Datasheet (PDF)

 ..1. Size:524K  lrc
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L2N7002LT1G

L2N7002LT1GS-L2N7002LT1GSmall Signal MOSFET115 mAmps, 60 Volts NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.ESD Protected:1000V2.

 ..2. Size:340K  lrc
l2n7002lt1g.pdf pdf_icon

L2N7002LT1G

LESHAN RADIO COMPANY, LTD.Small Signal MOSFETL2N7002LT1G115 mAmps, 60 VoltsNChannel SOT233 We declare that the material of product 1compliance with RoHS requirements.2 ESD Protected:1000VCASE 318, STYLE 21SOT 23 (TO236AB)MAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1.0 M) VDGR 60 Vd

 7.1. Size:570K  lrc
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L2N7002LT1G

L2N7002DW1T1GS-L2N7002DW1T1GSmall Signal MOSFET115 mAmps, 60V NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD Protected:1000V2. DE

 7.2. Size:778K  lrc
l2n7002klt1g.pdf pdf_icon

L2N7002LT1G

LESHAN RADIO COMPANY, LTD.Small Signal MOSFET L2N7002KLT1G380 mAmps, 60 Volts NChannel SOT23 S-L2N7002KLT1GFEATURES31)ESD Protected2)Low RDS(on)13)Surface Mount Package24)This is a Pb-Free Device5)We declare that the material of product compliant withSOT23RoHS requirements and Halogen Free.6) S- Prefix for Automotive and Other Applications RequiringUn

Otros transistores... L1N60F , L1N60I , L2N60D , L2N60F , L2N60I , L2N60P , L2N7002DMT1G , L2N7002DW1T1G , IRF3710 , L2N7002WT1G , L2SK3018WT1G , L2SK3019LT1G , LDN9926ET1G , LDP9933ET1G , LF2802A , LF2805A , LJ2015-53 .

 

 
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