L2N7002WT1G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: L2N7002WT1G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 0.225 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 0.115 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 10 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm
Encapsulados: SOT-323
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L2N7002WT1G datasheet
..1. Size:149K lrc
l2n7002wt1g.pdf 
LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mA, 60 V L2N7002WT1G N Channel SOT 323 3 We declare that the material of product compliance with RoHS requirements. 1 ESD Protected 1000V 2 MAXIMUM RATINGS SOT 323 (SC-70) Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain Gate Voltage (RGS = 1.0 M ) VDGR 60 Vdc Drain Current ID 115 mAdc Sim
7.1. Size:570K lrc
l2n7002dw1t1g s-l2n7002dw1t1g.pdf 
L2N7002DW1T1G S-L2N7002DW1T1G Small Signal MOSFET 115 mAmps, 60V N Channel SC-88 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. ESD Protected 1000V 2. DE
7.2. Size:778K lrc
l2n7002klt1g.pdf 
LESHAN RADIO COMPANY, LTD. Small Signal MOSFET L2N7002KLT1G 380 mAmps, 60 Volts N Channel SOT 23 S-L2N7002KLT1G FEATURES 3 1)ESD Protected 2)Low RDS(on) 1 3)Surface Mount Package 2 4)This is a Pb-Free Device 5)We declare that the material of product compliant with SOT 23 RoHS requirements and Halogen Free. 6) S- Prefix for Automotive and Other Applications Requiring Un
7.3. Size:446K lrc
l2n7002dmt1g.pdf 
LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002DMT1G N Channel SC 74 We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS Rating Symbol Value Unit SC-74 Drain Source Voltage VDSS 60 Vdc Drain Gate Voltage (RGS = 1.0 M ) VDGR 60 Vdc 115 mAMPS Drain Current ID 115 mAdc Continuous TC = 25 C (Note 1
7.5. Size:524K lrc
l2n7002lt1g s-l2n7002lt1g.pdf 
L2N7002LT1G S-L2N7002LT1G Small Signal MOSFET 115 mAmps, 60 Volts N Channel SOT-23 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. ESD Protected 1000V 2.
7.6. Size:167K lrc
l2n7002m3t5g s-l2n7002m3t5g.pdf 
LESHAN RADIO COMPANY, LTD. Small Signal MOSFET L2N7002M3T5G 115 mAmps, 60 Volts S-L2N7002M3T5G N Channel SOT 723 3 Pb-Free Package is Available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 2 1 ORDERING INFORMATION SOT-723 Device Marking Shipping L2N7002M3T5G 72 8000 Tap
7.7. Size:907K lrc
l2n7002sdw1t1g l2n7002sdw1t3g.pdf 
L2N7002SDW1T1G S-L2N7002SDW1T1G Small Signal MOSFET 380 mA, 60V N Channel SC-88 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. ESD protected Low RDS
7.8. Size:340K lrc
l2n7002lt1g.pdf 
LESHAN RADIO COMPANY, LTD. Small Signal MOSFET L2N7002LT1G 115 mAmps, 60 Volts N Channel SOT 23 3 We declare that the material of product 1 compliance with RoHS requirements. 2 ESD Protected 1000V CASE 318, STYLE 21 SOT 23 (TO 236AB) MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain Gate Voltage (RGS = 1.0 M ) VDGR 60 Vd
7.9. Size:597K lrc
l2n7002kdw1t1g l2n7002kdw1t3g.pdf 
L2N7002KDW1T1G S-L2N7002KDW1T1G Small Signal MOSFET 380 mAmps, 60 Volts N Channel SC-88 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. ESD Protected 2. D
7.10. Size:393K lrc
l2n7002swt1g s-l2n7002swt1g.pdf 
L2N7002SWT1G S-L2N7002SWT1G Small Signal MOSFET 380 mAmps, 60 Volts N Channel SC-70 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. ESD protected Low R
7.11. Size:965K lrc
l2n7002slt1g l2n7002slt3g.pdf 
L2N7002SLT1G S-L2N7002SLT1G Small Signal MOSFET 380 mAmps, 60V N Channel SOT-23 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. ESD protected Low RDS
7.12. Size:296K lrc
l2n7002dw1t1g.pdf 
LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps,60 Volts L2N7002DW1T1G N Channel SC-88 Pb-Free Package is Available. ESD Protected 1000V MAXIMUM RATINGS Rating Symbol Value Unit 3 2 1 Drain-Source Voltage VDSS 60 Vdc D2 G1 S1 Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc Drain Current ID 115 mAdc ID 75 - Continuous TC = 25 C (Note 1) IDM 800 - Continuo
7.13. Size:407K lrc
l2n7002flt1g.pdf 
LESHAN RADIO COMPANY, LTD. Small Signal MOSFET L2N7002FLT1G 30 Volts N Channel SOT 23 3 We declare that the material of product are Halogen Free and compliance with RoHS requirements. 1 2 FEATURES CASE 318, STYLE 21 SOT 23 (TO 236AB) RDS(ON) 8 @VGS=4V RDS(ON) 13 @VGS=2.5V Super high density cell design for extremely low RDS(ON) Exce
7.14. Size:301K jiejie micro
jmtl2n7002ks.pdf 
JMTL2N7002KS Description JMT N-channel MOSFET Features Application V =60V, I =0.3A Battery Operated Systems DS D R
Otros transistores... L1N60I
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History: LNTA7002NT1G
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