L2SK3019LT1G MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

L2SK3019LT1G datasheet

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LESHAN RADIO COMPANY, LTD. Silicon N-Channel MOSFET L2SK3019LT1G Applications 3 Interfacing,switching(30V,100mA) 1 Features 2 Low on-resistance SOT 23 Fast switching speed Low voltage drive(2.5V) makes this ideal for portable equipment Equivalent circuit Drive circuits can be simple Drain Parallel use is easy we declare that the material of product compliance with RoHS

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L2SK3018WT1G S-L2SK3018WT1G N-channel MOSFET 100 mA, 30 V 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. Low on-resistance. Drain (3) Fast switching sp

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LESHAN RADIO COMPANY, LTD. Silicon N-channel MOSFET L2SK3018WT1G 100 mA, 30 V 3 Features 1) Low on-resistance. 1 2) Fast switching speed. 2 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. SC-70 5) Easy to parallel. We declare that the material of product compliance with RoHS requirements. N - Channel MAX

Otros transistores... L2N60F , L2N60I , L2N60P , L2N7002DMT1G , L2N7002DW1T1G , L2N7002LT1G , L2N7002WT1G , L2SK3018WT1G , 10N60 , LDN9926ET1G , LDP9933ET1G , LF2802A , LF2805A , LJ2015-53 , LN100 , LND01 , LND150K1 .