NVD4806N Datasheet. Equivalente

 ..1. Size:114K  onsemi
 nvd4806n.pdf

NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4806N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 6.0 mW @

 8.1. Size:113K  onsemi
 nvd4809n.pdf

NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4809N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 9.0 mW @ 10 V 30 V 58 A

 8.2. Size:116K  onsemi
 ntd4805n nvd4805n.pdf

NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(on) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q

 8.3. Size:117K  onsemi
 ntd4809n nvd4809n.pdf

NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4809N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 9.0 mW @ 10 V 30 V 58 A

 8.4. Size:82K  onsemi
 nvd4804n.pdf

NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 4.0 mW @ 10 V 30 V 117

 8.5. Size:113K  onsemi
 nvd4805n.pdf

NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(on) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q

 8.6. Size:112K  onsemi
 nvd4808n.pdf

NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q

 8.7. Size:89K  onsemi
 ntd4804n nvd4804n.pdf

NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 4.0 mW @ 10 V 30 V 117 A