2SK1183 Todos los transistores

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 2sk1179 2sk1183.pdf

2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings IGSS IDSS VTH VDSS VGSS ID ID (pulse) PD Part EAS Conditions Conditions Conditions Number (nA) VGS ( A) VDS (V) VDS ID (mJ) (V) (V) (A) (A) (W) max (V) min max (V) min max (V) ( A) 2SK1179 500 20 8.5 34 85 400 500 20 250 500 2.0 4.0 10 250 2SK1183 200 20 3 12 25 30 500 20 250 200 2.0

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 2sk1189.pdf

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 2sk1188.pdf

2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings IGSS IDSS VTH VDSS VGSS ID ID (pulse) PD Part EAS Conditions Conditions Conditions Number (nA) VGS ( A) VDS (V) VDS ID (mJ) (V) (V) (A) (A) (W) max (V) min max (V) min max (V) ( A) 2SK1188 60 20 10 40 25 2.1 500 20 250 60 2.0 4.0 10 250 2SK2420 60 20 30 120 40 38 100 20 100 60 2.0 4.

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 2sk1187.pdf

2SK1187 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 100 V V 100 V I = 250 A, V = 0V DSS (BR) DSS D GS V 20 V I 500 nA V = 20V GSS GSS GS I 12 A I 250 A V = 100V, V = 0V D DSS DS GS I V 2.0 4.0 V V = 10V, I = 250 A D (pulse) 48 (Tch 15

 8.4. Size:41K  1
 2sk1186.pdf

2SK1186 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 100 V V 100 V I = 250 A, V = 0V DSS (BR) DSS D GS V 20 V I 500 nA V = 20V GSS GSS GS I 9I 250 A V = 100V, V = 0V D A DSS DS GS I V 2.0 4.0 V V = 10V, I = 250 A D (pulse) 36 (Tch 150

 8.5. Size:42K  1
 2sk1184.pdf

2SK1184 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 200 V V 200 V I = 250 A, V = 0V DSS (BR) DSS D GS V 20 V I 500 nA V = 20V GSS GSS GS I 5I 250 A V = 200V, V = 0V D A DSS DS GS I 20 (Tch 150 C) A V 2.0 4.0 V V = 10V, I = 250 A D (p

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 2sk1180.pdf

2SK1180 External dimensions 2 ...... FM100 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 500 V V 500 V I = 250 A, V = 0V DSS (BR) DSS D GS V 20 V I 500 nA V = 20V GSS GSS GS I 10 A I 250 A V = 500V, V = 0V D DSS DS GS I 40 (Tch 150 C) A V 2.0 4.0 V V = 10V, I = 250 A D

 8.7. Size:307K  toshiba
 2sk118.pdf

2SK118 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK118 General Purpose and Impedance Converter and Unit mm Condenser Microphone Applications High breakdown voltage VGDS = -50 V High input impedance I = -1 nA (max) (V = -30 V) GSS GS Low noise NF = 0.5dB (typ.) (R = 100 k , f = 120 Hz) G Small package Maximum Ratings (Ta = = 25

 8.8. Size:37K  no
 2sk1185.pdf

2SK1185 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 100 V V 100 V I = 250 A, V = 0V DSS (BR) DSS D GS V 20 V I 500 nA V = 20V GSS GSS GS I 5I 250 A V = 100V, V = 0V D A DSS DS GS I 20 (Tch 150 C) A V 2.0 4.0 V V = 10V, I = 250 A D (

 8.9. Size:30K  no
 2sk1181.pdf

2SK1181 External dimensions 2 ...... FM100 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 500 V V 500 V I = 250 A, V = 0V DSS (BR) DSS D GS V 20 V I 500 nA V = 20V GSS GSS GS I 13 A I 250 A V = 500V, V = 0V D DSS DS GS I 52 (Tch 150 C) A V 2.0 4.0 V V = 10V, I = 250 A

 8.10. Size:265K  inchange semiconductor
 2sk1180.pdf

isc N-Channel MOSFET Transistor 2SK1180 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for low voltage,high speed applications, Chopper regulator,DC-DC converter and