NVJS4405N Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVJS4405N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.63 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.7 nS

Cossⓘ - Capacitancia de salida: 22.4 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm

Encapsulados: SOT-363

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NVJS4405N datasheet

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NVJS4405N

NTJS4405N, NVJS4405N MOSFET Single, N-Channel, Small Signal, SC-88 25 V, 1.2 A http //onsemi.com Features V(BR)DSS RDS(on) Typ ID Max Advance Planar Technology for Fast Switching, Low RDS(on) 249 mW @ 4.5 V Higher Efficiency Extending Battery Life 25 V 1.2 A 299 mW @ 2.7 V AEC-Q101 Qualified and PPAP Capable - NVJS4405N These Devices are Pb-Free and are RoHS Co

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 ntjs4405nt1 ntjs4405nt4 nvjs4405n.pdf pdf_icon

NVJS4405N

NTJS4405N, NVJS4405N Small Signal MOSFET 25 V, 1.2 A, Single, N-Channel, SC-88 Features Advance Planar Technology for Fast Switching, Low RDS(on) http //onsemi.com Higher Efficiency Extending Battery Life V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJS4405N 249 mW @ 4.5 V These Devices are Pb-Free and are RoHS Compliant 25 V 1.2 A 299 mW @ 2.7

 9.1. Size:110K  onsemi
 nvjs4151p.pdf pdf_icon

NVJS4405N

NVJS4151P Trench Power MOSFET -20 V, -4.1 A, Single P-Channel, SC-88 Features Leading Trench Technology for Low RDS(ON) Extending Battery Life SC-88 Small Outline (2x2 mm) for Maximum Circuit Board http //onsemi.com Utilization, Same as SC-70-6 Gate Diodes for ESD Protection V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable 55 mW @ -4.5 V These Devi

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