NVMFD5852NL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVMFD5852NL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 52 nS

Cossⓘ - Capacitancia de salida: 240 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0069 Ohm

Encapsulados: DFN8

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NVMFD5852NL datasheet

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NVMFD5852NL

NVMFD5852NL Power MOSFET 40 V, 6.9 mW, 44 A, Dual N-Channel Logic Level, Dual SO-8FL Features Small Footprint (5x6 mm) for Compact Designs http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVMFD5852NLWF - Wettable Flanks Option for Enhanced Optical 6.9 mW @ 10 V Inspection 40 V 44 A

 6.1. Size:120K  onsemi
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NVMFD5852NL

NVMFD5853N, NVMFD5853NWF Power MOSFET 40 V, 10 mW, 53 A, Dual N-Channel, Dual SO-8FL Features http //onsemi.com Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVMFD5853NWF - Wettable Flanks Product 40 V 10 mW @ 10 V 53 A AEC-Q101 Qualified and PPAP Capabl

 6.2. Size:202K  onsemi
 nvmfd5853n nvmfd5853nwf.pdf pdf_icon

NVMFD5852NL

NVMFD5853N, NVMFD5853NWF MOSFET Dual N-Channel, Dual SO-8FL 40 V, 10 mW, 53 A http //onsemi.com Features Small Footprint (5x6 mm) for Compact Designs Low RDS(on) to Minimize Conduction Losses V(BR)DSS RDS(on) MAX ID MAX Low Capacitance to Minimize Driver Losses 40 V 10 mW @ 10 V 53 A NVMFD5853NWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable

 6.3. Size:75K  onsemi
 nvmfd5853nl.pdf pdf_icon

NVMFD5852NL

NVMFD5853NL Power MOSFET 40 V, 10 mW, 34 A, Dual N-Channel Logic Level, Dual SO-8FL Features Small Footprint (5x6 mm) for Compact Designs http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX NVMFD5853NLWF - Wettable Flanks Option for Enhanced Optical 10 mW @ 10 V Inspection 40 V 34 A A

MOSTRAR MÁS

Otros transistores... NVLUS4C12N, NVMD3P03, NVMD4N03, NVMD6N03R2G, NVMD6N04, NVMFD5483NL, NVMFD5485NL, NVMFD5489NL, STP75NF75, NVMFD5853N, NVMFD5853NL, NVMFD5873NL, NVMFS4C01N, NVMFS4C03N, NVMFS4C05N, NVMFS5113PL, NVMFS5826NL