NVMFS5834NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVMFS5834NL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 209 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0093 Ohm
Paquete / Cubierta: SO-8FL
Búsqueda de reemplazo de NVMFS5834NL MOSFET
NVMFS5834NL Datasheet (PDF)
ntmfs5834nl nvmfs5834nl.pdf

NTMFS5834NL,NVMFS5834NLPower MOSFET40 V, 75 A, 9.3 mW, Single N-ChannelFeatures Low RDS(on) Low Capacitance http://onsemi.com Optimized Gate Charge NVMFS5834NLWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX NVMFS Prefix for Automotive and Other Applications Requiring9.3 mW @ 10 VUnique Site and Control Change Requirements; AEC-Q10140 V 75 A13.6
nvmfs5834nl.pdf

NVMFS5834NLProduct PreviewPower MOSFET40 V, 9.3 mW, 76 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 Qualified These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)
nvmfs5832nl.pdf

NVMFS5832NLPower MOSFET40 V, 4.2 mW, 120 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseshttp://onsemi.com AEC-Q101 Qualified These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAX4.2 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)
nvmfs5833n.pdf

NVMFS5833NPower MOSFET40 V, 7.5 mW, 86 A, Single N-Channel,SO-8FLFeatures Low RDS(on)http://onsemi.com Low Capacitance Optimized Gate ChargeV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable NVMFS5833NWF - Wettable Franks Option for Enhanced Optical40 V 7.5 mW @ 10 V 86 AInspection These Devices are Pb-Free and are RoHS CompliantD (5)
Otros transistores... NVMFS4C01N , NVMFS4C03N , NVMFS4C05N , NVMFS5113PL , NVMFS5826NL , NVMFS5830NL , NVMFS5832NL , NVMFS5833N , TK10A60D , NVMFS5844NL , NVMFS5885NL , NVMFS5C404N , NVMFS5C404NL , NVMFS5C410NL , NVMFS5C423NL , NVMFS5C442NL , NVMFS5C604NL .
History: FDR8305N | NCE65N460 | STN1NK80Z | IRFS832 | ELM16400EA | AP0704GMT-HF | ZXMP6A13F
History: FDR8305N | NCE65N460 | STN1NK80Z | IRFS832 | ELM16400EA | AP0704GMT-HF | ZXMP6A13F



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