NVMFS5C646NL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVMFS5C646NL 📄📄
Código: 5C646L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 3.7 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 2 V
Qgⓘ - Carga de la puerta: 15.7 nC
trⓘ - Tiempo
de subida: 14.9 nS
Cossⓘ - Capacitancia de salida: 900 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm
Encapsulados: DFN5
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NVMFS5C646NL datasheet
..1. Size:74K onsemi
nvmfs5c646nl.pdf 
NVMFS5C646NL Power MOSFET 60 V, 4.7 mW, 93 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C646NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 4.7 mW @
5.1. Size:179K onsemi
nvmfs5c645nl.pdf
NVMFS5C645NL Power MOSFET 60 V, 4.0 mW, 100 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C645NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 4.0 mW
6.1. Size:167K onsemi
nvmfs5c670n.pdf
MOSFET Power, Single, N-Channel 60 V, 7.0 mW, 71 A NVMFS5C670N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C670NWF - Wettable Flank Option for Enhanced Optical 60 V 7.0 mW @ 10 V 71 A Inspection AEC-Q101 Qualifi
6.2. Size:72K onsemi
nvmfs5c604nl.pdf
NVMFS5C604NL Power MOSFET 60 V, 1.2 mW, 287 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C604NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 1.2 mW
6.3. Size:173K onsemi
nvmfs5c680nl.pdf
NVMFS5C680NL MOSFET Power, Single N-Channel 60 V, 27.5 mW, 21 A Features Small Footprint (5 x 6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFS5C680NLWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 27.5 mW @ 10 V 60 V 21 A These D
6.4. Size:132K onsemi
nvmfs5c673n.pdf
MOSFET Power, Single, N-Channel 60 V, 10.7 mW, 50 A NVMFS5C673N Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C673NWF - Wettable Flank Option for Enhanced Optical 60 V 10.7 mW @ 10 V 50 A Inspection AEC-Q101 Quali
6.5. Size:247K onsemi
nvmfs5c628n.pdf
MOSFET - Power, Single N-Channel 60 V, 3.0 mW, 150 A NVMFS5C628N Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C628NWF - Wettable Flank Option for Enhanced Optical V(BR)DSS RDS(ON) MAX ID MAX Inspection 60 V 3.0 mW @ 10 V 150 A AEC-Q101 Qualifie
6.6. Size:179K onsemi
nvmfs5c638nl.pdf
NVMFS5C638NL MOSFET Power, Single N-Channel 60 V, 3.0 mW, 133 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C638NLWF - Wettable Flank Option for Enhanced Optical 3.0 mW @ 10 V Inspection 60 V 133 A AEC-Q101 Qua
6.8. Size:182K onsemi
nvmfs5c682nl.pdf
NVMFS5C682NL MOSFET Power, Single N-Channel 60 V, 21 mW, 25 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C682NLWF - Wettable Flank Option for Enhanced Optical 21 mW @ 10 V 60 V 25 A Inspection 31.5 mW @ 4.5 V
6.9. Size:177K onsemi
nvmfs5c673nl.pdf
MOSFET Power, Single N-Channel 60 V, 9.2 mW, 50 A NVMFS5C673NL Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses V(BR)DSS RDS(ON) MAX ID MAX NVMFS5C673NLWF - Wettable Flank Option for Enhanced Optical 9.2 mW @ 10 V 60 V 50 A Inspection 13 mW @ 4.5 V
6.10. Size:73K onsemi
nvmfs5c612nl.pdf
NVMFS5C612NL Power MOSFET 60 V, 1.5 mW, 235 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C612NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 1.5 mW
6.11. Size:182K onsemi
nvmfs5c612n.pdf
NVMFS5C612N Power MOSFET Single N-Channel, 60 V, 1.65 mW, 225 A Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C612NWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 60 V 1.6
6.12. Size:117K onsemi
nvmfs5c670nl.pdf
NVMFS5C670NL Power MOSFET 60 V, 6.1 mW, 71 A, Single N-Channel Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses www.onsemi.com Low QG and Capacitance to Minimize Driver Losses NVMFS5C670NLWF - Wettable Flank Option for Enhanced Optical Inspection V(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable 6.1 mW @
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