NVTFS4C06N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NVTFS4C06N
   Código: 06WF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 3.1 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 21 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.2 V
   Carga de la puerta (Qg): 11.6 nC
   Tiempo de subida (tr): 32 nS
   Conductancia de drenaje-sustrato (Cd): 841 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0042 Ohm
   Paquete / Cubierta: WDFN8

Búsqueda de reemplazo de MOSFET NVTFS4C06N

NVTFS4C06N Datasheet (PDF)

..1. Size:81K onsemi
nvtfs4c06n.pdf

NVTFS4C06NPower MOSFET30 V, 4.2 mW, 71 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C06NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring4.2 mW @ 1

6.1. Size:82K onsemi
nvtfs4c08n.pdf

NVTFS4C08NPower MOSFET30 V, 5.9 mW, 55 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C08NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring5.9 mW @ 1

6.2. Size:75K onsemi
nvtfs4c05n.pdf

NVTFS4C05NPower MOSFET30 V, 3.6 mW, 102 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C05NWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring3.6 mW @

7.1. Size:82K onsemi
nvtfs4c25n.pdf

NVTFS4C25NPower MOSFET30 V, 17 mW, 22 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS4C25NWF - Wettable Flanks Product17 mW @ 10 V NVT Prefix for Automotive and Other Applications Requiring

7.2. Size:80K onsemi
nvtfs4c13n.pdf

NVTFS4C13NPower MOSFET30 V, 9.4 mW, 40 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C13NWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring9.4 mW @ 1

7.3. Size:78K onsemi
nvtfs4c10n.pdf

NVTFS4C10NPower MOSFET30 V, 7.4 mW, 47 A, Single N-Channel,m8FLFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS4C10NWF - Wettable Flanks Product NVT Prefix for Automotive and Other Applications Requiring7.4 mW @ 1

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