NVTFS5124PL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NVTFS5124PLPower MOSFET-60 V, -6 A, 260 mW, Single P-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified These are Pb-Free Devices260 mW @ -10 V-60 V -6 AMAXIMUM RATINGS (TJ = 25C unless

NVTFS5116PLPower MOSFET-60 V, -14 A, 52 mW, Single P-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com NV Prefix for Automotive and Other Applications RequiringAEC-Q101 Qualified Site and Change ControlsV(BR)DSS RDS(on) MAX ID MAX These are Pb

NVTFS5116PLMOSFET Power, SingleP-Channel-60 V, -14 A, 52 mWFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS5116PLWF - Wettable Flanks Product52 mW @ -10 V-60 V -14 A AEC-Q101 Qualified and PPAP Capable72 mW

MOSFET Power, SingleN-Channel40 V, 3.1 mW, 107 ANVTFS5C453NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVTFS5C453NLWF - Wettable Flanks Product3.1 mW @ 10 V40 V107 A AEC-Q101 Qualified and PPAP Capable5.2 mW

NVTFS5826NLPower MOSFET60 V, 24 mW, 20 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com NV Prefix for Automotive and Other Applications RequiringAEC-Q101 Qualified Site and Change ControlsV(BR)DSS RDS(on) MAX ID MAX These are Pb-F

NVTFS5C680NLMOSFET Power, SingleN-Channel60 V, 26.5 mW, 20 AFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS5C680NLWF - Wettable Flanks Product26.5 mW @ 10 V AEC-Q101 Qualified and PPAP Capable60 V 20 A The

NVTFS5C454NLPower MOSFET40 V, 4.0 mW, 85 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C454NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro

MOSFET Power, SingleN-Channel40 V, 9.0 mW, 41 ANVTFS5C471NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS5C471NLWF - Wettable Flanks Product9.0 mW @ 10 V AEC-Q101 Qualified and PPAP Capable40 V 41 A These

NVTFS5811NLMOSFET Power, SingleN-Channel40 V, 6.7 mW, 40 AFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designhttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS5811NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 6.7 mW @ 10 V40 V 40 A These

MOSFET Power, SingleN-Channel40 V, 4.8 mW, 74 ANVTFS5C460NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS5C460NLWF - Wettable Flanks Product4.8 mW @ 10 V AEC-Q101 Qualified and PPAP Capable40 V 74 A These

NVTFS5C466NLMOSFET - Power, SingleN-Channel40 V, 7.3 mW, 51 AFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS5C466NLWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable7.3 mW @ 10 V These Devices are

NVTFS5826NLPower MOSFET60 V, 24 mW, 20 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5826NLWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable24 mW @ 10 V These Devices are Pb-F

NVTFS5811NLPower MOSFET40 V, 6.7 mW, 40 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com NV Prefix for Automotive and Other Applications RequiringAEC-Q101 Qualified Site and Change ControlsV(BR)DSS RDS(on) MAX ID MAX These are Pb-

NVTFS5C673NLPower MOSFET60 V, 9.8 mW, 50 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C673NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro

NVTFS5C670NLPower MOSFET60 V, 6.8 mW, 70 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C670NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP CapableV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are Ro

NVTFS5820NLPower MOSFET60 V, 11.5 mW, Single N-Channel, m8FLFeatures Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low QG and Capacitance to Minimize Driver Losses AEC-Q101 QualifiedV(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices*11.5 mW @ 10 V60 V 29 AMAXIMUM RATINGS (TJ = 25C unless o

NVTFS5C658NLPower MOSFET60 V, 5.0 mW, 109 A, Single N-ChannelFeatures Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses NVTFS5C658NLWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable5.0 mW @ 10 V These Devices are Pb

MOSFET Power, SingleN-Channel40 V, 14 mW, 26 ANVTFS5C478NLFeatures Small Footprint (3.3 x 3.3 mm) for Compact Designwww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS5C478NLWF - Wettable Flanks ProductV(BR)DSS RDS(on) MAX ID MAX AEC-Q101 Qualified and PPAP Capable14 mW @ 10 V These Devices are