NVTR01P02L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVTR01P02L
Código: P02
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 1.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.25 VQgⓘ - Carga de la puerta: 3.1 nC
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 130 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm
Paquete / Cubierta: SOT-23
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NVTR01P02L Datasheet (PDF)
ntr1p02l nvtr01p02l.pdf
NTR1P02L, NVTR01P02LPower MOSFET-20 V, -1.3 A, P-Channel SOT-23 PackageThese miniature surface mount MOSFETs low RDS(on) assurehttp://onsemi.comminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. TypicalV(BR)DSS RDS(on) Max ID Maxapplications are DC-DC converters and power management inportable and battery-
ntr1p02l nvtr01p02l.pdf
Product specificationNTR1P02L, NVTR01P02LPower MOSFETV(BR)DSS RDS(on) Max ID Max-20 V, -1.3 A, P-Channel -20 V 220 mW @ -4.5 V -1.3 ASOT-23 PackageP-ChannelThese miniature surface mount MOSFETs low RDS(on) assure Dminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. Typicalapplications are DC-DC converters
ntr0202pl nvtr0202pl.pdf
NTR0202PL, NVTR0202PLPower MOSFET-20 V, -400 mA, P-Channel SOT-23 PackageFeatureswww.onsemi.com Low RDS(on) Provides Higher Efficiency and Extends Battery LifeRDSon = 0.80 W, VGS = -10 VV(BR)DSS RDS(on) Typ ID MAXRDSon = 1.10 W, VGS = -4.5 V-20 V 550 mW @ -10 V -400 mA Miniature SOT-23 Surface Mount Package Saves Board Space NVT Prefix for Automotive and Other A
nvtr0202pl.pdf
NTR0202PL, NVTR0202PLPower MOSFET-20 V, -400 mA, P-Channel SOT-23 PackageFeatureshttp://onsemi.com Low RDS(on) Provides Higher Efficiency and Extends Battery LifeRDSon = 0.80 W, VGS = -10 VV(BR)DSS RDS(on) Typ ID MAXRDSon = 1.10 W, VGS = -4.5 V-20 V 550 mW @ -10 V -400 mA Miniature SOT-23 Surface Mount Package Saves Board Space AEC-Q101 Qualified and PPAP Capabl
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SJ248 | CS50N80
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918