NVTR4502P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVTR4502P  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.95 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm

Encapsulados: SOT-23

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NVTR4502P datasheet

 ..1. Size:136K  onsemi
 ntr4502p nvtr4502p.pdf pdf_icon

NVTR4502P

NTR4502P, NVTR4502P Power MOSFET -30 V, -1.95 A, Single, P-Channel, SOT-23 Features http //onsemi.com Leading Planar Technology for Low Gate Charge / Fast Switching V(BR)DSS RDS(on) TYP ID Max (Note 1) Low RDS(ON) for Low Conduction Losses 155 mW @ -10 V SOT-23 Surface Mount for Small Footprint (3 X 3 mm) -30 V -1.95 A AEC Q101 Qualified - NVTR4502P 240 mW @ -4.5 V

 ..2. Size:133K  onsemi
 ntr4502pt1 nvtr4502p.pdf pdf_icon

NVTR4502P

NTR4502P, NVTR4502P Power MOSFET -30 V, -1.95 A, Single, P-Channel, SOT-23 Features http //onsemi.com Leading Planar Technology for Low Gate Charge / Fast Switching V(BR)DSS RDS(on) TYP ID Max (Note 1) Low RDS(ON) for Low Conduction Losses 155 mW @ -10 V SOT-23 Surface Mount for Small Footprint (3 X 3 mm) -30 V -1.95 A AEC Q101 Qualified - NVTR4502P 240 mW @ -4.5 V

 ..3. Size:120K  tysemi
 ntr4502p nvtr4502p.pdf pdf_icon

NVTR4502P

Product specification NTR4502P, NVTR4502P Power MOSFET V(BR)DSS RDS(on) TYP ID Max (Note 1) 155 mW @ -10 V -30 V, -1.95 A, Single, P-Channel, -30 V -1.95 A SOT-23 240 mW @ -4.5 V P-Channel MOSFET Features S Leading Planar Technology for Low Gate Charge / Fast Switching Low RDS(ON) for Low Conduction Losses SOT-23 Surface Mount for Small Footprint (3 X 3 mm) G AEC Q

 7.1. Size:92K  onsemi
 ntr4503n nvtr4503n.pdf pdf_icon

NVTR4502P

NTR4503N, NVTR4503N Power MOSFET 30 V, 2.5 A, Single N-Channel, SOT-23 Features Leading Planar Technology for Low Gate Charge / Fast Switching 4.5 V Rated for Low Voltage Gate Drive www.onsemi.com SOT-23 Surface Mount for Small Footprint (3 x 3 mm) NV Prefix for Automotive and Other Applications Requiring Unique V(BR)DSS RDS(on) TYP ID MAX Site and Control Change Requi

MOSTRAR MÁS

Otros transistores... NVTFS4C08N, NVTFS4C10N, NVTFS4C13N, NVTFS4C25N, NVTFS5124PL, NVTJD4001N, NVTR01P02L, NVTR0202PL, 2N60, NVTR4503N, NX1029X, NX2020N2, NX2020P1, NX3020NAK, NX7002AK, NX7002AKS, NX7002AKW