NX7002AK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NX7002AK
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.265 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.19 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 3.4 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm
Paquete / Cubierta: TO-236AB
- Selección de transistores por parámetros
NX7002AK Datasheet (PDF)
nx7002ak.pdf

NX7002AK60 V, single N-channel Trench MOSFET10 July 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.1.2 Features and benefits Very fast switching Trench MOSFET technology ESD protected1.3 A
nx7002aks.pdf

NX7002AKS60 V, dual N-channel Trench MOSFETRev. 1 1 March 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection Trench MOSF
nx7002aka.pdf

NX7002AKA60 V, single N-channel Trench MOSFET18 February 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protected AEC-Q101 qualified
nx7002akw.pdf

NX7002AKW60 V, single N-channel Trench MOSFET11 July 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET technology ESD protected1.3 App
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: STP60NF06LFP | DMN2020LSN | IRLI3803PBF | NCE80H12 | IMZ120R350M1H
History: STP60NF06LFP | DMN2020LSN | IRLI3803PBF | NCE80H12 | IMZ120R350M1H



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DHF10H035R | DHF100N03B13 | DHF035N04 | DHEZ24B31 | DHESJ17N65 | DHESJ13N65 | DHESJ11N65 | DHE9Z24 | DHE90N055R | DHE90N045R | DHE85N08 | DHE8290 | DHE80N08B22 | DHE8004 | DHE50N15 | DHE50N06FZC
Popular searches
2sd468 | c2240 transistor | 2sc1918 | c1213 transistor | 2sc1400 replacement | 2sb817 | mn2488 datasheet | c2026 transistor