NX7002BKMB Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NX7002BKMB  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.35 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.3 nS

Cossⓘ - Capacitancia de salida: 4.6 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm

Encapsulados: DFN1006B-3

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NX7002BKMB datasheet

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NX7002BKMB

 5.1. Size:235K  nxp
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NX7002BKMB

NX7002BKM 60 V, N-channel Trench MOSFET 3 December 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology

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NX7002BKMB

NX7002BKW 60 V, single N-channel Trench MOSFET 20 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroSt

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NX7002BKMB

NX7002BKS 60 V, dual N-channel Trench MOSFET 12 May 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroS

MOSTRAR MÁS

Otros transistores... NX2020N2, NX2020P1, NX3020NAK, NX7002AK, NX7002AKS, NX7002AKW, NX7002BK, NX7002BKM, IRF830, NX7002BKS, NX7002BKW, NX7002BKXB, OM6005SC, OM6027SC, OM60N10SC, OM6101ST, OM6104ST