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NX7002BKMB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NX7002BKMB
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.35 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.3 nS
   Cossⓘ - Capacitancia de salida: 4.6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm
   Paquete / Cubierta: DFN1006B-3
 

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NX7002BKMB Datasheet (PDF)

 ..1. Size:234K  nxp
 nx7002bkmb.pdf pdf_icon

NX7002BKMB

NX7002BKMB60 V, N-channel Trench MOSFET3 December 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology

 5.1. Size:235K  nxp
 nx7002bkm.pdf pdf_icon

NX7002BKMB

NX7002BKM60 V, N-channel Trench MOSFET3 December 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology

 6.1. Size:263K  nxp
 nx7002bkw.pdf pdf_icon

NX7002BKMB

NX7002BKW60 V, single N-channel Trench MOSFET20 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroSt

 6.2. Size:294K  nxp
 nx7002bks.pdf pdf_icon

NX7002BKMB

NX7002BKS60 V, dual N-channel Trench MOSFET12 May 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroS

MOSTRAR MÁS

Otros transistores... NX2020N2 , NX2020P1 , NX3020NAK , NX7002AK , NX7002AKS , NX7002AKW , NX7002BK , NX7002BKM , IRF1405 , NX7002BKS , NX7002BKW , NX7002BKXB , OM6005SC , OM6027SC , OM60N10SC , OM6101ST , OM6104ST .

History: H8N60F | NP89N04MUK | OM60N10SC | IPP65R110CFDA | JCS10N70B | ZXMN6A08E6TA | 2SK241

 

 
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