P50B6EA Todos los transistores

 

P50B6EA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P50B6EA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 62.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 225 nS
   Cossⓘ - Capacitancia de salida: 355 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
   Paquete / Cubierta: TO-252

 Búsqueda de reemplazo de MOSFET P50B6EA

 

P50B6EA Datasheet (PDF)

 ..1. Size:169K  shindengen
p50b6ea.pdf

P50B6EA
P50B6EA

P we MOS Eo r F T OUT IELNUntimmP cae BakgFP 0 6 A5B E 6 V5A0 0P50B6EA 000A00 F aueetr FsS tat wihncig L wRoON

 9.1. Size:356K  international rectifier
auirgp50b60pd1.pdf

P50B6EA
P50B6EA

AUIRGP50B60PD1AUTOMOTIVE GRADE AUIRGP50B60PD1-EWARP2 SERIES IGBT WITHC VCES = 600VULTRAFAST SOFT RECOVERY DIODEVCE(on) typ. = 2.00V@ VGE = 15V IC = 33AApplications Automotive HEV and EVEquivalent MOSFET PFC and ZVS SMPS CircuitsGParameters FeaturesRCE(on) typ. = 61mE Low VCE(ON) NPT Technology, Positive TemperatureID (FET equivalent) = 50ACoefficie

 9.2. Size:421K  international rectifier
irgp50b60pd1-e.pdf

P50B6EA
P50B6EA

PD - 96170SMPS IGBTIRGP50B60PD1-EPWARP2 SERIES IGBT WITHULTRAFAST SOFT RECOVERY DIODEC VCES = 600VVCE(on) typ. = 2.00VApplications@ VGE = 15V IC = 33A Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power SuppliesEquivalent MOSFETG Consumer Electronics Power SuppliesParameters Lead-FreeRCE(on) typ. = 61mEFeaturesID (FE

 9.3. Size:868K  international rectifier
irgp50b60pd.pdf

P50B6EA
P50B6EA

PD - 94624BSMPS IGBT IRGP50B60PDWARP2 SERIES IGBT WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VVCE(on) typ. = 2.00VApplications@ VGE = 15V IC = 33A Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power SuppliesEquivalent MOSFETG Consumer Electronics Power SuppliesParameters RCE(on) typ. = 61mEFeaturesID (FET equivalent) = 50

 9.4. Size:472K  international rectifier
irgp50b60pd1.pdf

P50B6EA
P50B6EA

PD - 94625BSMPS IGBT IRGP50B60PD1WARP2 SERIES IGBT WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VVCE(on) typ. = 2.00VApplications@ VGE = 15V IC = 33A Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power SuppliesEquivalent MOSFETG Consumer Electronics Power SuppliesParameters RCE(on) typ. = 61mEFeaturesID (FET equivalent) = 5

 9.5. Size:417K  infineon
irgp50b60pd1pbf.pdf

P50B6EA
P50B6EA

PD - 95330ASMPS IGBTIRGP50B60PD1PbFWARP2 SERIES IGBT WITHULTRAFAST SOFT RECOVERY DIODEC VCES = 600VVCE(on) typ. = 2.00VApplications@ VGE = 15V IC = 33A Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power SuppliesEquivalent MOSFETG Consumer Electronics Power SuppliesParameters Lead-FreeRCE(on) typ. = 61mEFeaturesID (F

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