P50B6EA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P50B6EA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 62.5 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 50 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 50 nC
Tiempo de subida (tr): 225 nS
Conductancia de drenaje-sustrato (Cd): 355 pF
Resistencia entre drenaje y fuente RDS(on): 0.0085 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET P50B6EA
P50B6EA Datasheet (PDF)
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irgp50b60pd1pbf.pdf
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