PHP2N50E Todos los transistores

 

PHP2N50E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PHP2N50E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: SOT78
     - Selección de transistores por parámetros

 

PHP2N50E Datasheet (PDF)

 ..1. Size:74K  philips
 php2n50e 3.pdf pdf_icon

PHP2N50E

Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 2 Ag Low thermal resistanceRDS(ON) 5 sGENERAL DESCRIPTIONN-channe

 ..2. Size:73K  philips
 php2n50e phb2n50e phd2n50e.pdf pdf_icon

PHP2N50E

Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 2 Ag Low thermal resistanceRDS(ON) 5 sGENERAL DESCRIPTIONN-channe

 7.1. Size:56K  philips
 php2n50 1.pdf pdf_icon

PHP2N50E

Philips Semiconductors Product specification PowerMOS transistor PHP2N50 GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 500 Vavalanche energy capability, stable ID Drain current (DC) 2 Aoff-state characteristics, fast Ptot Total power dissipation

 9.1. Size:75K  philips
 php2n60e phb2n60e phd2n60e.pdf pdf_icon

PHP2N50E

Philips Semiconductors Product specification PowerMOS transistors PHP2N60E, PHB2N60E, PHD2N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 1.9 Ag Low thermal resistanceRDS(ON) 6 sGENERAL DESCRIPTIONN-chan

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXTU2N80P | MEE7816AS-G | SVSP14N60TD2

 

 
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