QM0008J MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: QM0008J
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 9.1 nC
   trⓘ - Tiempo de subida: 21.6 nS
   Cossⓘ - Capacitancia de salida: 29 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.31 Ohm
   Paquete / Cubierta: SOT-89

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QM0008J Datasheet (PDF)

..1. Size:334K ubiq
qm0008j.pdf

QM0008J N-Ch 100V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0008J is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 310m 2.2Afor most of the small power switching and load switch applications. Applications The QM0008J meet the RoHS and Green Product re

8.1. Size:343K ubiq
qm0008d.pdf

QM0008D N-Ch 100V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0008D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 310m 5.4Afor most of the synchronous buck converter applications . Applications The QM0008D meet the RoHS and Green Product requirement w

8.2. Size:325K ubiq
qm0008g.pdf

QM0008G N-Ch 100V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0008G is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 310m 2.2Afor most of the small power switching and load switch applications. Applications The QM0008G meet the RoHS and Green Product re

8.3. Size:341K ubiq
qm0008u.pdf

QM0008U N-Ch 100V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0008U is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 310m 5.4Afor most of the synchronous buck converter applications . Applications The QM0008U meet the RoHS and Green Product requirement w

8.4. Size:303K ubiq
qm0008k.pdf

QM0008K N-Ch 100V Fast Switching MOSFETsGeneral Description Product SummeryThe QM0008K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 310m 1.2Afor most of the small power switching and load switch applications. Applications The QM0008K meet the RoHS and Green Product re

8.5. Size:899K cn vbsemi
qm0008k.pdf

QM0008Kwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested0.240 at VGS = 10 V 2.0 Material categorization:0.250 at VGS = 6 V100 1.8 2.9 nC0.260 at VGS = 4.5 V1.7APPLICATIONS DC/DC Converters Load Switch LED Backlighting

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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