QM0008K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: QM0008K

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19 nS

Cossⓘ - Capacitancia de salida: 29 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.31 Ohm

Encapsulados: SOT-23

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QM0008K datasheet

 ..1. Size:303K  ubiq
 qm0008k.pdf pdf_icon

QM0008K

QM0008K N-Ch 100V Fast Switching MOSFETs General Description Product Summery The QM0008K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 310m 1.2A for most of the small power switching and load switch applications. Applications The QM0008K meet the RoHS and Green Product re

 ..2. Size:899K  cn vbsemi
 qm0008k.pdf pdf_icon

QM0008K

QM0008K www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested 0.240 at VGS = 10 V 2.0 Material categorization 0.250 at VGS = 6 V 100 1.8 2.9 nC 0.260 at VGS = 4.5 V 1.7 APPLICATIONS DC/DC Converters Load Switch LED Backlighting

 8.1. Size:343K  ubiq
 qm0008d.pdf pdf_icon

QM0008K

QM0008D N-Ch 100V Fast Switching MOSFETs General Description Product Summery The QM0008D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 310m 5.4A for most of the synchronous buck converter applications . Applications The QM0008D meet the RoHS and Green Product requirement w

 8.2. Size:325K  ubiq
 qm0008g.pdf pdf_icon

QM0008K

QM0008G N-Ch 100V Fast Switching MOSFETs General Description Product Summery The QM0008G is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 100V 310m 2.2A for most of the small power switching and load switch applications. Applications The QM0008G meet the RoHS and Green Product re

MOSTRAR MÁS

Otros transistores... QM0004P, QM0004S, QM0004U, QM0006G, QM0007G, QM0008D, QM0008G, QM0008J, IRFZ48N, QM0008U, QM0016D, QM0016F, QM0016P, QM0016S, QM0018AD, QM0020AP, QM0020P