QM2409K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: QM2409K

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 3.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9.6 nS

Cossⓘ - Capacitancia de salida: 90.8 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm

Encapsulados: SOT-23

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QM2409K datasheet

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QM2409K

QM2409K P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2409K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.1A for most of the small power switching and load switch applications. Applications The QM2409K meet the RoHS and Green Product req

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QM2409K

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qm2409g.pdf pdf_icon

QM2409K

QM2409G P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2409G is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.7A for most of the small power switching and load switch applications. Applications The QM2409G meet the RoHS and Green Product req

 8.2. Size:357K  ubiq
qm2409j.pdf pdf_icon

QM2409K

QM2409J P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2409J is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.7A for most of the small power switching and load switch applications. Applications The QM2409J meet the RoHS and Green Product req

Otros transistores... QM2404C1, QM2404D, QM2404J, QM2404K, QM2404V, QM2407K, QM2409G, QM2409J, SPP20N60C3, QM2409V, QM2410D, QM2410G, QM2410J, QM2410K, QM2410S, QM2410V, QM2411G