QM2409K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: QM2409K
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 3.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.6 nS
Cossⓘ - Capacitancia de salida: 90.8 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
Encapsulados: SOT-23
Búsqueda de reemplazo de QM2409K MOSFET
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QM2409K datasheet
qm2409k.pdf
QM2409K P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2409K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.1A for most of the small power switching and load switch applications. Applications The QM2409K meet the RoHS and Green Product req
qm2409g.pdf
QM2409G P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2409G is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.7A for most of the small power switching and load switch applications. Applications The QM2409G meet the RoHS and Green Product req
qm2409j.pdf
QM2409J P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2409J is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.7A for most of the small power switching and load switch applications. Applications The QM2409J meet the RoHS and Green Product req
Otros transistores... QM2404C1, QM2404D, QM2404J, QM2404K, QM2404V, QM2407K, QM2409G, QM2409J, SPP20N60C3, QM2409V, QM2410D, QM2410G, QM2410J, QM2410K, QM2410S, QM2410V, QM2411G
History: CM800
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