QM2409V MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: QM2409V
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 3.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 VQgⓘ - Carga de la puerta: 9.7 nC
trⓘ - Tiempo de subida: 9.6 nS
Cossⓘ - Capacitancia de salida: 90.8 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
Paquete / Cubierta: TSOP6
Búsqueda de reemplazo de MOSFET QM2409V
QM2409V Datasheet (PDF)
qm2409v.pdf
QM2409V P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2409V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.3Afor most of the small power switching and load switch applications. Applications The QM2409V meet the RoHS and Green Product req
qm2409g.pdf
QM2409G P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2409G is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.7Afor most of the small power switching and load switch applications. Applications The QM2409G meet the RoHS and Green Product req
qm2409j.pdf
QM2409J P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2409J is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.7Afor most of the small power switching and load switch applications. Applications The QM2409J meet the RoHS and Green Product req
qm2409k.pdf
QM2409K P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2409K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 75m -3.1Afor most of the small power switching and load switch applications. Applications The QM2409K meet the RoHS and Green Product req
qm2409k.pdf
QM2409Kwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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