QM2410J MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: QM2410J
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 5.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 VQgⓘ - Carga de la puerta: 8.5 nC
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 70 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.037 Ohm
Paquete / Cubierta: SOT-89
Búsqueda de reemplazo de MOSFET QM2410J
QM2410J Datasheet (PDF)
qm2410j.pdf
QM2410J N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2410J is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 37m 5.1Afor most of the small power switching and load switch applications. Applications The QM2410J meet the RoHS and Green Product requi
qm2410k.pdf
QM2410K N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2410K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 37m 4.2Afor most of the small power switching and load switch applications. Applications The QM2410K meet the RoHS and Green Product requir
qm2410d.pdf
QM2410D N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2410D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 25m 22Afor most of the small power switching and load switch applications. Applications The QM2410D meet the RoHS and Green Product require
qm2410s.pdf
QM2410S N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2410S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 25m 6.2Afor most of the small power switching and load switch applications. Applications The QM2410S meet the RoHS and Green Product requi
qm2410g.pdf
QM2410G N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2410G is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 37m 5.1Afor most of the small power switching and load switch applications. Applications The QM2410G meet the RoHS and Green Product requi
qm2410v.pdf
QM2410V N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2410V is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 37m 4.5Afor most of the small power switching and load switch applications. Applications The QM2410V meet the RoHS and Green Product requir
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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