QM2416C1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: QM2416C1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 1.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 6.4 nC
   trⓘ - Tiempo de subida: 29.6 nS
   Cossⓘ - Capacitancia de salida: 41 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
   Paquete / Cubierta: SOT-363

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QM2416C1 Datasheet (PDF)

..1. Size:357K ubiq
qm2416c1.pdf

QM2416C1 N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2416C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 65m 1.8Afor most of the small power switching and load switch applications. Applications The QM2416C1 meet the RoHS and Green Product req

8.1. Size:348K ubiq
qm2416y1.pdf

QM2416Y1 N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2416Y1 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 65m 1.8Afor most of the small power switching and load switch applications. Applications The QM2416Y1 meet the RoHS and Green Product req

8.2. Size:247K ubiq
qm2416j.pdf

QM2416J N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2416J is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 48m 4.3Afor most of the small power switching and load switch applications. Applications The QM2416J meet the RoHS and Green Product requir

8.3. Size:314K ubiq
qm2416k.pdf

QM2416K N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2416K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 48m 3.5Afor most of the small power switching and load switch applications. Applications The QM2416K meet the RoHS and Green Product requir

8.4. Size:877K cn vbsemi
qm2416k.pdf

QM2416Kwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Conver

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