QM2502W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: QM2502W
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 5.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 VQgⓘ - Carga de la puerta: 11.3 nC
trⓘ - Tiempo de subida: 53.4 nS
Cossⓘ - Capacitancia de salida: 86 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
Paquete / Cubierta: TSSOP-8
Búsqueda de reemplazo de MOSFET QM2502W
QM2502W Datasheet (PDF)
qm2502w.pdf
QM2502W Dual N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2502W is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 22m 5.8Afor most of the small power switching and load switch applications. Applications The QM2502W meet the RoHS and Green Product r
qm2502s.pdf
QM2502S Dual N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2502S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 18.5m 7Afor most of the small power switching and load switch applications. Applications The QM2502S meet the RoHS and Green Product r
qm2502m9.pdf
QM2502M9 Dual N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2502M9 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 18.5m 11Afor most of the small power switching and load switch applications. Applications The QM2502M9 meet the RoHS and Green Produ
qm2507w.pdf
QM2507W Dual P-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2507W is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -20V 80m -3.2Afor most of the small power switching and load switch applications. Applications The QM2507W meet the RoHS and Green Product
qm2504w.pdf
QM2504W Dual N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2504W is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 22m 5.8Afor most of the small power switching and load switch applications. Applications The QM2504W meet the RoHS and Green Product r
qm2506w.pdf
QM2506W Dual N-Ch 20V Fast Switching MOSFETsGeneral Description Product SummeryThe QM2506W is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 20V 28m 5Afor most of the small power switching and load switch applications. Applications The QM2506W meet the RoHS and Green Product req
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