QM3001J MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: QM3001J
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 6.4 nC
trⓘ - Tiempo de subida: 8.4 nS
Cossⓘ - Capacitancia de salida: 100 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
Paquete / Cubierta: SOT-89
Búsqueda de reemplazo de MOSFET QM3001J
QM3001J Datasheet (PDF)
qm3001j.pdf
QM3001J P-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3001J is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -30V 52m -4.5Afor most of the synchronous buck converter applications . Applications The QM3001J meet the RoHS and Green Product requirement ,
qm3001k.pdf
Product specificationQM3001K P-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3001K is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -30V 52m -3.3Afor most of the small power switching and load switch applications . Applications The QM3001K meet the RoHS
qm3001d.pdf
QM3001D P-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3001D is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -30V 42m -20Afor most of the synchronous buck converter applications . Applications The QM3001D meet the RoHS and Green Product requirement ,
qm3001g.pdf
QM3001G P-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3001G is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -30V 52m -4.5Afor most of the synchronous buck converter applications . Applications The QM3001G meet the RoHS and Green Product requirement ,
qm3001v.pdf
QM3001V P-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3001V is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -30V 52m -3.9Afor most of the small power switching and load switch applications . Applications The QM3001V meet the RoHS and Green Product req
qm3001u.pdf
QM3001U P-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3001U is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -30V 42m -18Afor most of the synchronous buck converter applications . Applications The QM3001U meet the RoHS and Green Product requirement , 1
qm3001s.pdf
QM3001S P-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3001S is the highest performance trench P-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge -30V 42m -6Afor most of the synchronous buck converter applications . Applications The QM3001S meet the RoHS and Green Product requirement , 10
qm3001k.pdf
QM3001Kwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23)
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
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