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PHP50N03LT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PHP50N03LT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 86 W
   Voltaje máximo drenador - fuente |Vds|: 25 V
   Corriente continua de drenaje |Id|: 48 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Resistencia entre drenaje y fuente RDS(on): 0.021 Ohm
   Paquete / Cubierta: SOT78

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PHP50N03LT Datasheet (PDF)

 ..1. Size:111K  philips
phb50n03lt phd50n03lt php50n03lt 7.pdf

PHP50N03LT PHP50N03LT

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP50N03LT, PHB50N03LT Logic level FET PHD50N03LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 48 A High thermal cycling performance Low thermal resistance RDS(ON) 16 m (VGS = 10 V)g Logic leve

 6.1. Size:49K  philips
php50n03t 1.pdf

PHP50N03LT PHP50N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHP50N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 30 Vtrench technology. The device ID Drain current (DC) 50 Afeatures very low on-state r

 7.1. Size:65K  philips
php50n06lt 3.pdf

PHP50N03LT PHP50N03LT

Philips Semiconductors Product specification TrenchMOS transistor PHP50N06LT, PHB50N06LT, PHD50N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 50 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V)g Low thermal

 7.2. Size:54K  philips
php50n06 1.pdf

PHP50N03LT PHP50N03LT

Philips Semiconductors Product specification PowerMOS transistor PHP50N06 GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 52 ASwitched Mode Power Supplies Ptot Total power dissipation 150 W(SMPS), mo

Otros transistores... PHP37N06LT , PHP3N40E , PHP3N50E , PHP3N60E , PHP42N03LT , PHP44N06LT , PHP4N60E , PHP4ND40E , STF13NM60N , PHP50N06LT , PHP55N03LT , PHP60N06LT , PHP65N06LT , PHP69N03LT , PHP6N10E , PHP6N50E , PHP6N60E .

 

 
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