QM3010G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: QM3010G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 2.72 nC
trⓘ - Tiempo de subida: 19.2 nS
Cossⓘ - Capacitancia de salida: 38 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
Paquete / Cubierta: SOT-223
Búsqueda de reemplazo de MOSFET QM3010G
QM3010G Datasheet (PDF)
qm3010g.pdf
QM3010G N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3010G is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 55m 4.2Afor most of the synchronous buck converter applications . Applications The QM3010G meet the RoHS and Green Product requirement with
qm3010s.pdf
QM3010S N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3010S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 45m 4.6Afor most of the synchronous buck converter applications . Applications The QM3010S meet the RoHS and Green Product requirement with
qm3010j.pdf
QM3010J N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3010J is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 30V 55m 4.2Afor most of the synchronous buck converter applications . Applications The QM3010J meet the RoHS and Green Product High Frequency P
qm3010b.pdf
QM3010B N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3010B is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 45m 19Afor most of the synchronous buck converter applications . Applications The QM3010B meet the RoHS and Green Product requirement with
qm3010u.pdf
QM3010U N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3010U is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 45m 15Afor most of the synchronous buck converter applications . Applications The QM3010U meet the RoHS and Green Product requirement 100%
qm3010k.pdf
QM3010K N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3010K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 55m 3.5Afor most of the synchronous buck converter applications . Applications The QM3010K meet the RoHS and Green Product requirement with
qm3010d.pdf
QM3010D N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3010D is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 30V 45m 15Afor most of the synchronous buck converter applications . Applications The QM3010D meet the RoHS and Green Product High Frequency Po
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918