QM3010K Todos los transistores

 

QM3010K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: QM3010K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 3.5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 17 nS
   Conductancia de drenaje-sustrato (Cd): 38 pF
   Resistencia entre drenaje y fuente RDS(on): 0.055 Ohm
   Paquete / Cubierta: SOT-23

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QM3010K Datasheet (PDF)

 ..1. Size:314K  ubiq
qm3010k.pdf

QM3010K QM3010K

QM3010K N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3010K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 55m 3.5Afor most of the synchronous buck converter applications . Applications The QM3010K meet the RoHS and Green Product requirement with

 8.1. Size:349K  ubiq
qm3010s.pdf

QM3010K QM3010K

QM3010S N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3010S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 45m 4.6Afor most of the synchronous buck converter applications . Applications The QM3010S meet the RoHS and Green Product requirement with

 8.2. Size:340K  ubiq
qm3010g.pdf

QM3010K QM3010K

QM3010G N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3010G is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 55m 4.2Afor most of the synchronous buck converter applications . Applications The QM3010G meet the RoHS and Green Product requirement with

 8.3. Size:350K  ubiq
qm3010j.pdf

QM3010K QM3010K

QM3010J N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3010J is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 30V 55m 4.2Afor most of the synchronous buck converter applications . Applications The QM3010J meet the RoHS and Green Product High Frequency P

 8.4. Size:309K  ubiq
qm3010b.pdf

QM3010K QM3010K

QM3010B N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3010B is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 45m 19Afor most of the synchronous buck converter applications . Applications The QM3010B meet the RoHS and Green Product requirement with

 8.5. Size:299K  ubiq
qm3010u.pdf

QM3010K QM3010K

QM3010U N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3010U is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 45m 15Afor most of the synchronous buck converter applications . Applications The QM3010U meet the RoHS and Green Product requirement 100%

 8.6. Size:317K  ubiq
qm3010d.pdf

QM3010K QM3010K

QM3010D N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3010D is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 30V 45m 15Afor most of the synchronous buck converter applications . Applications The QM3010D meet the RoHS and Green Product High Frequency Po

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