QM3010S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: QM3010S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.5 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 4.6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 2.72 nC
Tiempo de subida (tr): 19.2 nS
Conductancia de drenaje-sustrato (Cd): 38 pF
Resistencia entre drenaje y fuente RDS(on): 0.045 Ohm
Paquete / Cubierta: SOP-8
Búsqueda de reemplazo de MOSFET QM3010S
QM3010S Datasheet (PDF)
qm3010s.pdf
QM3010S N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3010S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 45m 4.6Afor most of the synchronous buck converter applications . Applications The QM3010S meet the RoHS and Green Product requirement with
qm3010g.pdf
QM3010G N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3010G is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 55m 4.2Afor most of the synchronous buck converter applications . Applications The QM3010G meet the RoHS and Green Product requirement with
qm3010j.pdf
QM3010J N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3010J is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 30V 55m 4.2Afor most of the synchronous buck converter applications . Applications The QM3010J meet the RoHS and Green Product High Frequency P
qm3010b.pdf
QM3010B N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3010B is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 45m 19Afor most of the synchronous buck converter applications . Applications The QM3010B meet the RoHS and Green Product requirement with
qm3010u.pdf
QM3010U N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3010U is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 45m 15Afor most of the synchronous buck converter applications . Applications The QM3010U meet the RoHS and Green Product requirement 100%
qm3010k.pdf
QM3010K N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3010K is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 30V 55m 3.5Afor most of the synchronous buck converter applications . Applications The QM3010K meet the RoHS and Green Product requirement with
qm3010d.pdf
QM3010D N-Ch 30V Fast Switching MOSFETsGeneral Description Product SummeryThe QM3010D is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 30V 45m 15Afor most of the synchronous buck converter applications . Applications The QM3010D meet the RoHS and Green Product High Frequency Po
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