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PHP6ND50E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PHP6ND50E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Id|ⓘ - Corriente continua de drenaje: 5.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: SOT78

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PHP6ND50E Datasheet (PDF)

 ..1. Size:58K  philips
php6nd50e phb6nd50e.pdf

PHP6ND50E
PHP6ND50E

Philips Semiconductors Product specification PowerMOS transistors PHP6ND50E, PHB6ND50E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 5.9 A High thermal cycling performanceg Low thermal resistance RDS(ON) 1.5 Fast reverse recovery di

 ..2. Size:63K  philips
php6nd50e 2.pdf

PHP6ND50E
PHP6ND50E

Philips Semiconductors Product specification PowerMOS transistors PHP6ND50E, PHB6ND50E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 5.9 A High thermal cycling performanceg Low thermal resistance RDS(ON) 1.5 Fast reverse recovery di

 9.1. Size:77K  philips
php6n50e phb6n50e.pdf

PHP6ND50E
PHP6ND50E

Philips Semiconductors Product specification PowerMOS transistors PHP6N50E, PHB6N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 5.9 Ag Low thermal resistanceRDS(ON) 1.5 sGENERAL DESCRIPTIONN-channel, enh

 9.2. Size:53K  philips
php6n10e 1.pdf

PHP6ND50E
PHP6ND50E

Philips Semiconductors Product specification PowerMOS transistor PHP6N10E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 100 Vavalanche energy capability, stable ID Drain current (DC) 6.3 Ablocking voltage, fast switching and Ptot Total power dis

 9.3. Size:74K  philips
php6n60e phb6n60e.pdf

PHP6ND50E
PHP6ND50E

Philips Semiconductors Product specification PowerMOS transistors PHP6N60E, PHB6N60E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 600 V Stable off-state characteristics High thermal cycling performance ID = 5.4 Ag Low thermal resistanceRDS(ON) 1.8 sGENERAL DESCRIPTIONN-channel, enh

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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