QM4002D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: QM4002D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 5.5 nC
   trⓘ - Tiempo de subida: 2.2 nS
   Cossⓘ - Capacitancia de salida: 76 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
   Paquete / Cubierta: TO-252

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QM4002D Datasheet (PDF)

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qm4002d.pdf

QM4002D N-Ch 40V Fast Switching MOSFETsGeneral Description Product SummeryThe QM4002D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 40V 26m 23Afor most of the synchronous buck converter applications . Applications The QM4002D meet the RoHS and Green Product requirement , 100

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qm4002s.pdf

QM4002S N-Ch 40V Fast Switching MOSFETsGeneral Description Product SummeryThe QM4002S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 40V 26m 7.2Afor most of the synchronous buck converter applications . Applications The QM4002S meet the RoHS and Green Product requirement , 10

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qm4002ad.pdf

QM4002AD N-Ch 40V Fast Switching MOSFETsGeneral Description Product SummeryThe QM4002AD is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 40V 28m 23Afor most of the synchronous buck converter applications . Applications The QM4002AD meet the RoHS and Green Product requirement ,

8.3. Size:836K cn vbsemi
qm4002ad.pdf

QM4002ADwww.VBsemi.twN-Channel 4 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.013 at VGS = 10 V 5540 42 nC0.018 at VGS = 4.5 V 45APPLICATIONSD OR-ingTO-252 Server DC/DCGDG SSTop ViewN-Channel MOSFETABS

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: TF2312 | BLS60R150F-B

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