QM4002S Todos los transistores

 

QM4002S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: QM4002S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.2 nS
   Cossⓘ - Capacitancia de salida: 76 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
   Paquete / Cubierta: SOP-8
 

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QM4002S Datasheet (PDF)

 ..1. Size:334K  ubiq
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QM4002S

QM4002S N-Ch 40V Fast Switching MOSFETsGeneral Description Product SummeryThe QM4002S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 40V 26m 7.2Afor most of the synchronous buck converter applications . Applications The QM4002S meet the RoHS and Green Product requirement , 10

 8.1. Size:300K  ubiq
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QM4002S

QM4002D N-Ch 40V Fast Switching MOSFETsGeneral Description Product SummeryThe QM4002D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 40V 26m 23Afor most of the synchronous buck converter applications . Applications The QM4002D meet the RoHS and Green Product requirement , 100

 8.2. Size:318K  ubiq
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QM4002S

QM4002AD N-Ch 40V Fast Switching MOSFETsGeneral Description Product SummeryThe QM4002AD is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 40V 28m 23Afor most of the synchronous buck converter applications . Applications The QM4002AD meet the RoHS and Green Product requirement ,

 8.3. Size:836K  cn vbsemi
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QM4002S

QM4002ADwww.VBsemi.twN-Channel 4 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.013 at VGS = 10 V 5540 42 nC0.018 at VGS = 4.5 V 45APPLICATIONSD OR-ingTO-252 Server DC/DCGDG SSTop ViewN-Channel MOSFETABS

Otros transistores... QM3404K , QM3802S , QM3807M6 , QM3809M6 , QM4001D , QM4001S , QM4002AD , QM4002D , 50N06 , QM4003D , QM4003S , QM4004D , QM4004S , QM4006D , QM4006M6 , QM4013AD , QM4013D .

History: AUIRF7736M2TR1 | NTD4804NA-1G

 

 
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