QM6006B Todos los transistores

 

QM6006B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: QM6006B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 74 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 45 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 19.3 nC
   Tiempo de subida (tr): 50 nS
   Conductancia de drenaje-sustrato (Cd): 145 pF
   Resistencia entre drenaje y fuente RDS(on): 0.018 Ohm
   Paquete / Cubierta: TO-263

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QM6006B Datasheet (PDF)

 ..1. Size:302K  ubiq
qm6006b.pdf

QM6006B
QM6006B

QM6006B N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6006B is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 45Afor most of the synchronous buck converter applications . Applications The QM6006B meet the RoHS and Green Product requirement , 10

 8.1. Size:334K  ubiq
qm6006f.pdf

QM6006B
QM6006B

QM6006F N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6006F is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 30Afor most of the synchronous buck converter applications . Applications The QM6006F meet the RoHS and Green Product requirement , 10

 8.2. Size:314K  ubiq
qm6006p.pdf

QM6006B
QM6006B

QM6006P N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6006P is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 45Afor most of the synchronous buck converter applications . Applications The QM6006P meet the RoHS and Green Product requirement , 10

 8.3. Size:224K  ubiq
qm6006m6.pdf

QM6006B
QM6006B

QM6006M6 N-Ch 60V Fast Switching MOSFETs General Description Product Summary The QM6006M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 40A for most of the synchronous buck converter applications . Applications The QM6006M6 meet the RoHS and Green Product requirement

 8.4. Size:312K  ubiq
qm6006d.pdf

QM6006B
QM6006B

QM6006D N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6006D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 35Afor most of the synchronous buck converter applications . Applications The QM6006D meet the RoHS and Green Product requirement , 100

 8.5. Size:347K  ubiq
qm6006s.pdf

QM6006B
QM6006B

QM6006S N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6006S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 6.3Afor most of the synchronous buck converter applications . Applications The QM6006S meet the RoHS and Green Product requirement , 10

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