QM6006P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: QM6006P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 74 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 45 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 19.3 nC
Tiempo de subida (tr): 50 nS
Conductancia de drenaje-sustrato (Cd): 145 pF
Resistencia entre drenaje y fuente RDS(on): 0.018 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET QM6006P
QM6006P Datasheet (PDF)
qm6006p.pdf
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QM6006P N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6006P is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 45Afor most of the synchronous buck converter applications . Applications The QM6006P meet the RoHS and Green Product requirement , 10
qm6006f.pdf
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QM6006F N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6006F is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 30Afor most of the synchronous buck converter applications . Applications The QM6006F meet the RoHS and Green Product requirement , 10
qm6006m6.pdf
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QM6006M6 N-Ch 60V Fast Switching MOSFETs General Description Product Summary The QM6006M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 40A for most of the synchronous buck converter applications . Applications The QM6006M6 meet the RoHS and Green Product requirement
qm6006d.pdf
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QM6006D N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6006D is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 35Afor most of the synchronous buck converter applications . Applications The QM6006D meet the RoHS and Green Product requirement , 100
qm6006s.pdf
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QM6006S N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6006S is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 6.3Afor most of the synchronous buck converter applications . Applications The QM6006S meet the RoHS and Green Product requirement , 10
qm6006b.pdf
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QM6006B N-Ch 60V Fast Switching MOSFETsGeneral Description Product SummeryThe QM6006B is the highest performance trench N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 60V 18m 45Afor most of the synchronous buck converter applications . Applications The QM6006B meet the RoHS and Green Product requirement , 10
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
![QM6006P](https://alltransistors.com/images/us.png)
![QM6006P](https://alltransistors.com/images/es.png)
![QM6006P](https://alltransistors.com/images/ru.png)
Liste
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